Abstract:A novel ultrafast and low-loss lateral injection-enhanced gate transistor (LIEGT) is proposed and investigated by simulation. The device features a MOS-controlled shorted anode (MCSA) and a bias voltage (V-AG) applied between the anode trench gate (ATG) and the anode electrode. The n+ anode is shorted to the N-buffer through the MOS channel around the ATG when the MCSA is activated with V-AG > V-th during turn-off and blocking states, and thus the p+ anode/N-buffer junction is unactivated. The MCSA LIEGT turns off as fast as a unipolar device by optimizing the time gap to activate the MCSA before turning off the cathode trench gate (CTG). The activated MCSA would deactivate hole injection from the anode side and synchronously quickly extract the electrons from the N-drift, which improves the switching speed and dramatically decreases the turn-off energy loss (E-OFF). In the blocking state, the MCSA LIEGT achieves a MOS break down mode instead of an open base p-n-p bipolar breakdown mode. Thus, the breakdown voltage (BV) is not only improved but also independent of the p+ anode doping concentration. In the forward conduction state with V-AG = 0, the MCSA is unactivated and hence the MCSA LIEGT operates like a conventional LIEGT without deteriorating the on-state voltage drop (V-ON). Compared with the conventional LIEGT, the proposed device decreases E-OFF by 88% and improves the BV by 13% at the same V-ON. Importantly, E-OFF is almost independent of V-ON.

Characterisation of Dual Gate Lateral Inversion Layer Emitter Transistor

Analysis and Design of the Dual-Gate Inversion Layer Emitter Transistor

Dual Gate Lateral Inversion Layer Emitter Transistor

The Double Gate Lateral Inversion Layer Emitter Transistor - A Novel Power Device Concept with A Dynamic Emitter

Dual Gate Lateral Inversion Layer Emitter Transistor for Power and High Voltage Integrated Circuits

Reverse Conducting Double Gate Lateral Insulated Gate Bipolar Transistor in Soi Based Technology

A novel dual gated lateral MOS-bipolar power device

Experimental Demonstration of an Ultra-Fast Double Gate Inversion Layer Emitter Transistor (DG-ILET)

Inversion layer emitter devices for HV ICs

The Inversion Layer Emitter Thyristor - A Novel Power Device Concept

A novel heavily doped drift - auxiliary cathode lateral insulated gate transistor structure

A Study of Fast Switching, Anode Shorted Lateral Insulated Gate Bipolar Transistor

The trench inversion layer emitter thyristor (ILET)

CMOS Compatible Shorted Anode Auxiliary Cathode Lateral Insulated Gate Bipolar Transistors

The MOS Inversion Layer As a Minority Carrier Injector

An Injection Enhanced LIGBT on Thin SOI Layer Compatible with CMOS Process

Ultrafast and Low-Turn-OFF Loss Lateral IEGT with a MOS-Controlled Shorted Anode

Performance of 200 V Cmos Compatible Auxiliary Cathode Lateral Insulated Gate Transistors

Lateral Insulated Gate P-I-n Transistor (Ligpt)-a New MOS Gate Lateral Power Device

Double Gate Lateral Igbt on Partial Membrane

An Injection Enhanced LIGBT on Thin SOI Layer with Low ON-state Voltage