Abstract:The dual-gate inversion layer emitter transistor (DGILET) is a device in which the injection of minority carriers takes place from an inversion layer formed under a MOS gate. Therefore, the device can be switched between MOS and bipolar modes using the gate giving the means to achieve a superior combination of low conduction losses and low switching losses. The structure of the device and operation in both the unipolar and bipolar modes are described in detail. Devices have been fabricated on bulk silicon wafers using junction isolation and experimental results confirm the expected superior performance. In particular, the results confirm predictions that if the inversion layer injector is properly designed, the voltage snapback that occurs during the transition between unipolar and bipolar modes can be completely suppressed. This can be achieved with a compact structure in contrast to the extended structures required in anode-shorted lateral insulated gate bipolar transistor (LIGBTs). An equivalent circuit for the DGILET is presented and the control of the minority carrier injection is also analyzed. Experimental results show that the DGILET can switch at speeds approaching those characteristic of MOSFETs with operating current densities comparable to LIGBTs. The results show that the DGILET offers lower overall losses than an LIGBT at switching frequencies above about 10 kHz.

The trench inversion layer emitter thyristor (ILET)

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Inversion layer emitter devices for HV ICs

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Analysis and Design of the Dual-Gate Inversion Layer Emitter Transistor

The MOS Inversion Layer As a Minority Carrier Injector

Experimental Demonstration of an Ultra-Fast Double Gate Inversion Layer Emitter Transistor (DG-ILET)

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Dual Gate Lateral Inversion Layer Emitter Transistor

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Characterisation of Dual Gate Lateral Inversion Layer Emitter Transistor

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A CMOS Compatible Lateral Emitter Switched Thyristor with Enhanced Turn-on Capability

2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)

A New Lateral Insulated Base Emitter Switched Thyristor

An On-State Analytical Model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

Analysis of Double Trench Insulated Gate Bipolar Transistor

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