Abstract:Bulk silicon Complementary Metal Oxide Semiconductor (CMOS) devices have distinct single event latch-up (SEL) problems in aerospace. Therefore, it is essential that CMOS devices are designed with appropriate circuit-level methods. Traditional resistor hardness satisfies the current aerospace trend of low cost, high performance, and miniaturization. Therefore conventional resistor hardness is often applied in circuit-level designs due to the reduction of latch-up current. In circuits containing a DC-DC buck converter, the resistor is connected to the back of the converter in the traditional method. However, the traditional method is unable to take devices out of the latch-up owing to the small resistance range. To solve this problem, the paper proposes an improved design for the resistor in front of the DC-DC buck converter. The proposed method enables the devices to exit the latch-up by increasing the resistance range according to the input characteristic of the DC-DC buck converter. The paper quantifies the range of the resistor through the parametric model containing the resistor and the DC-DC buck converter. Two CMOS devices are chosen for pulsed laser experiments, verifying that the proposed method increases the resistance ranges by 300% to 400% compared to the conventional method. It is also demonstrated that the proposed method exits the devices from latch-up within the resistor ranges. That is, the resistance ranges of 34 Ω~41 Ω and 51 Ω~56 Ω reduce the latch-up currents of the devices to below holding currents of 72.1 mA and 24.2 mA, respectively.

Device Simulation Studies on Latch-Up Effects in CMOS Inverters Induced by Microwave Pulse

Theoretical modeling of effect of pulse width on microwave pulse triggered internal transient latch-up in CMOS inverters

Understanding and modeling of internal transient latch-up susceptibility in CMOS inverters due to microwave pulses.

EXPERIMENTAL STUDY AND SPICE SIMULATION OF CMOS INVERTERS LATCH-UP EFFECTS DUE TO HIGH POWER MICROWAVE INTERFERENCE

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

The Influence of an LIGBT on CMOS Latch Up in Power Integrated Circuit

ESD Pulse Width Effect on RC-triggered NMOS with Power on or Off

DEVICE SIMULATION OF EFFECTS OF MICROWAVE ELECTROMAGNETIC INTERFERENCE ON CMOS RS FLIP-FLOPS

Study of Latch-Up Immunization in Bulk CMOS Integrated Circuits Exposed to Transient Ionizing Radiation

Theoretical models for microwave pulse induced thermal failure in CMOS integrated circuits

Research on single event latch-up effect of CMOS based on TCAD

Investigation of the Effects of Snubber Capacitors on Turn-on Overvoltage of SiC MOSFETs

An experimental extracted model for latchup analysis in CMOS process

Transient latchup characteristics in n-well CMOS

Static CMOS Latch-Up Considerations in HVIC Design

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Influence of Electrical Conditions on Silicon Pulse Shaping and Modelocking

Study of Single Event Latch-Up Hardness for CMOS Devices with a Resistor in Front of DC-DC Converter

A new criterion for transient latchup analysis in bulk CMOS

Physics-based Analytical Modeling of CMOS Latchup