Influence of Electrical Conditions on Silicon Pulse Shaping and Modelocking

Shiming Gao,Lizhong Cao,Bing Sun,Sichang Jiang,Kai Hu,Yizhen Wei

DOI: https://doi.org/10.1364/acp.2012.af4a.70

2012-01-01

Abstract:The silicon pulse shaping and modelocking laser is characterized by varying the input electrical conditions, A narrower output pulse can be obtained by increasing modulation depth, reducing duty cycle, and increasing driving current of amplifier.

What problem does this paper attempt to address?

Modeling of a diode transverse-pumped cesium vapor laser

Jing Yang,Yanan Yang,Jingbo Luo,Bailiang Pan

DOI: https://doi.org/10.1007/s00340-013-5638-4

2013-01-01

Applied Physics B

Abstract:A physical model is established to demonstrate the mechanism and the kinetic process of a diode transverse-pumped cesium vapor laser. The distribution of pump laser power is described, and the effects of parameters such as the temperature, the cell length and the output coupler reflectivity on the output performance of a cesium vapor laser are simulated and analyzed. The simulation results agree well with the experiment data which shows the validity of this model. A set of optimization parameters is achieved for improving the output characteristics of a diode transverse-pumped Cs vapor laser.
Influences of Operating Parameters on Deleterious Processes of Side-Pumped Cesium Vapor Laser Amplifiers with Flowing Medium

Chunsheng Xia,Xingqi Xu,Jinghua Huang,Chenyi Su,Bailiang Pan

DOI: https://doi.org/10.1063/1.5035182

IF: 2.877

2018-01-01

Journal of Applied Physics

Abstract:Multiple deleterious processes occurring in alkali vapor laser amplifiers can significantly degrade their performance. To study that, a theoretical model of a side-pumped flowing-gas alkali vapor amplifier is set up, which mainly takes into account the effect of saturation, amplified spontaneous emission, quenching, energy pooling, photoexcitation, Penning ionization, photo-ionization, and ion recombination. Influences of powers of the pump and seed laser, the velocity of gas mixture flow, and the cell length on the deleterious processes are also simulated. The results show that the influence of deleterious processes can be increased when pump power enhances. But it can be effectively restrained with relatively strong seed laser power and optimized operating parameters. The total percent drop in amplified laser power is about 19.95% at a pump power of 500 W, a seed laser power of 5 W, a saturated flowing velocity of 40 m/s, and an optimized cell length of 7 cm.
Shaping Current Waveforms for direct Modulation of Semiconductor Lasers

L. Illing,M. B. Kennel

DOI: https://doi.org/10.1109/JQE.2004.826446

2004-04-27

Abstract:We demonstrate a technique for shaping current inputs for the direct modulation of a semiconductor laser for digital communication. The introduction of shaped current inputs allows for the suppression of relaxation oscillations and the avoidance of dynamical memory in the physical laser device, i.e., the output will not be influenced by previously communicated information. On the example of time-optimized bits, the possible performance enhancement for high data rate communications is shown numerically.

Optics
Modeling of a Diode Side Pumped Cesium Vapor Laser MOPA System

Jing Yang,Bailiang Pan,Yanan Yang,Jingbo Luo,Aiqing Qian

DOI: https://doi.org/10.1109/JQE.2013.2297443

2014-01-01

Abstract:A physical model is established to describe the kinetic process and the laser amplification mechanism of a diode side pumped alkali vapor laser MOPA system. The pump energy distribution inside the vapor cell is displayed. Taking into consideration the amplification saturation effect, the influences of the parameters, such as the temperature, cell length, and pump power on the output performance, are simulated and analyzed. The gain saturation effect in the direction of cell axis is also discussed. The calculations have a good agreement with observations, which shows the validity of this model. A group of optimal parameters is obtained for further improving the output characteristics of a cesium laser MOPA system.
Effects of the pulse shape on the chirp compensation by using the semiconductor laser amplifiers

Tao Jin,Dexiu Huang,Junlin Qiu

1995-01-01

Abstract:As a result of the self-phase modulation(SPM) of laser amplifiers, the frequency chirp is imposed on the optical pulses when they are amplified in a gain-saturated traveling-wave-semiconductor-laser-amplifier, whereas a properly impressed chirp results in not only canceling the primary chirp of input pulses, but also possibly compressing pulses with a simple group-velocity-delay-line. In this paper, the shape of the amplified output pulses and their impressed frequency chirp were calculated for different input pulses, and the effects of different shapes of the input pulses on the chirp compensation in using optical amplifier were also analyzed in detail.
Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Yong Gan,J. K. Chen

DOI: https://doi.org/10.1007/s00339-011-6573-z

2011-01-01

Applied Physics A

Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.
The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser

Jianjun Yang,Decheng Zhang,Jinye Wei,Lingling Shui,Xinjin Pan,Guangren Lin,Tiande Sun,Yicheng Tang

DOI: https://doi.org/10.3390/mi13071119

IF: 3.4

2022-07-16

Micromachines

Abstract:In laser processing, due to the short interaction time between an ultrashort pulse laser and silicon, it has been difficult to study the lattice temperature change characteristics of silicon. In this paper, the interaction between a picosecond laser and silicon was studied. Based on the Fokker–Planck equation and two-temperature model (TTM) equation, a simulation model of silicon heating by different pulse-width picosecond lasers was established. The results show that within the range of 15 to 5 ps, the maximum lattice temperature tended to increase first and then decrease with the decreasing pulse width. The watershed was around 7.5 ps. The model error was less than 3.2% when the pulse width was 15 ps and the single pulse energy was 25 μJ.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Yong Gan,J. K. Chen

DOI: https://doi.org/10.1016/j.ijthermalsci.2012.10.001

IF: 4.779

2013-01-01

International Journal of Thermal Sciences

Abstract:Atomic-level simulations of a silicon nanofilm irradiated by ultrashort-pulsed laser bursts were performed using the molecular dynamics coupled with an ultrafast energy transport model. The effects of pulse number in a laser burst and separation time between pulses on the thermomechanical response of the irradiated film were investigated. The numerical results showed that for laser bursts with an identical total energy, the more the pulses or the longer the pulse separation time, the lower the carrier temperature and number density. The same trend was also observed for the lattice temperature at the total laser fluence 0.1 J/cm(2) but 0.18 J/cm(2), as a result of the dynamical change in optical properties. It was also found that the induced thermal stress wave was weakened by increasing either pulse separation time or pulse number in a laser burst. (C) 2012 Elsevier Masson SAS. All rights reserved.
Modeling of Pulsed Cs Vapor Lasers in Transversely Pumped Configuration

Fei Zi,Xian Zhang,Xiaoxiao Ma,Kaikai Huang,Xuanhui Lu

DOI: https://doi.org/10.1007/s00340-017-6745-4

2017-01-01

Applied Physics B

Abstract:By means of combining the transverse differential equation of pump intensity and the longitudinal differential equation of laser power, an optical model for transversely pumped diode-pumped alkali vapor lasers (DPALs) is established. The spatial distributions of both radius and intensities are considered in the model for pump and laser beams. The simulation results are in good agreement with the experiment ones as compared to the reported pulsed transversely pumped Cs DPALs. Influences of pump power, temperature, cell length, and beam waist on output performance are investigated, which suggests a set of parameters for efficient DPAL operation. In particular, the optimal ratio of the beam waist between the laser and pump beam is demonstrated to be 0.81, which can increase the laser power by 85% larger than the current experimental result.
ESD Pulse Width Effect on RC-triggered NMOS with Power on or Off

Xinyu Zhu,Fangjun Yu,Hongyu Shen,Zekun Xu,Shurong Dong

DOI: https://doi.org/10.23919/ieds48938.2021.9468845

2021-01-01

Abstract:The robustness of RC-triggered NMOS clamp in 28nm process is significantly reduced under the condition of long pulse width and power on. The simulation results show that the device faces the risk of turning off in these two cases, and the simulation results are in line with the test results.
Pulse Control of Passively Q-Switched Microchip Laser with Cw Pumping Modulation

WY Wang,ML Gong,GF Jin

DOI: https://doi.org/10.1117/12.369433

1999-01-01

Abstract:In order to improve the stability of passively Q-switched lasers we put forward a kind of pre-pumping mechanism(1). Based on this mechanism we deduce an analytical expression which can be used to calculate or optimize the important parameters of passively Q-switched lasers. The analytical expression has been discussed in detail and the results can also be used in many cases of passively Q-switched lasers.
Effect of Pumping Conditions on Output Characteristics of a Gain-Switched Nd:YVO4 Laser

SHENG Fang,CHEN Jun,GE Jian-hong

DOI: https://doi.org/10.3969/j.issn.1003-501x.2005.04.008

2005-01-01

Abstract:The dynamic characteristics of a gain-switched Nd:YVO4 laser pumped by a laser diode (LD) are simulated. By solving the gain-switching rate equations, the dependence of pulse width and its peak power for gain-switched laser pulses on LD pump parameters are theoretically analyzed. Furthermore, a method to narrow the output pulse width of a gain-switched solid-state laser is presented in the paper. It means that the direct current of the LD close to threshold and the pulsed current two times higher than threshold should be selected, furthermore, the pumping pulse width must be adjusted to ensure single-pulse output. The experimental results accord well with numerical calculations. So the method is most effective. The laser pulses at 1.064μm with pulse width of 20ns and controllable repetition rate from 1Hz to 4kHz is achieved by the method.
Effects of tunable circuit parameters on pulsed discharge and input-output characteristics of a XeCl excimer laser

Jiayi Chen,Zhihang Zhao,Zhigang Liu,Yangyang Fu

DOI: https://doi.org/10.1088/1361-6463/ad172c

2024-01-04

Abstract:Abstract High-pressure, pulsed discharge-pumped XeCl excimer lasers are operating in the ultraviolet range at a wavelength of 308 nm. In this paper, a one-dimensional fluid model coupled to a magnetic pulse compression (MPC) excitation circuit and a laser gain model is established for describing the discharge and laser output characteristics of XeCl excimer lasers. The effects of the peaking capacitor C p (the terminal of the MPC circuit) on the discharge properties and input-output characteristics are explored. The results reveal that C p plays a key role in suppressing discharge pulse oscillation, which in turn influences the peak value and duration of the laser pulse. By optimizing the capacitance, a maximum excimer formation efficiency of 6.6% and a maximum laser output efficiency of 5% (output energy of 1.26 J) are obtained when C p = 1.12 C s , where C s is the storage capacitor in the MPC circuit.

physics, applied
The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

M. Barberoglou,G.D. Tsibidis,D. Gray,E. Magoulakis,C. Fotakis,E. Stratakis,P. A. Loukakos

DOI: https://doi.org/10.1007/s00339-013-7893-y

2013-07-31

Abstract:The effect of ultrashort laser-induced morphological changes upon irradiation of silicon with double pulse sequences is investigated under conditions that lead to mass removal. The temporal delay between twelve double and equal-energy pulses (Ep=0.24J/cm2 each, with pulse duration tp=430fs, 800nm laser wavelength) was varied between 0 and 14ps and a decrease of the damaged area, crater depth size and periodicity of the induced subwavelength ripples (by 3-4%) was observed with increasing pulse delay. The proposed underlying mechanism is based on the combination of carrier excitation and energy thermalization and capillary wave solidification and aims to provide an alternative explanation to the control of ripple periodicity by temporal pulse tailoring. This work demonstrates the potential of pulse shaping technology to improve nano/micro processing.

Materials Science
The Impact of Pulse Shaping on Coherent Dynamics near a Conical Intersection

Qici Deng,Junjie Yu,Hongguang Duan,Hongxing He

DOI: https://doi.org/10.3390/photonics11060511

IF: 2.536

2024-05-28

Photonics

Abstract:Utilizing lasers to probe microscopic physical processes is a crucial tool in contemporary physics research, where the influence of laser properties on excitation processes is a focal point for scientists. In this study, we investigated the impact of laser pulses on the quantum yield of electronic wave packets near conical intersections (CIs). To do so, we employed the time non-local quantum master equation to calculate the time-evolution dynamics of wave packets on excited-state potential energy surfaces (PESs) and projected them onto effective reaction coordinates. The waveform of laser pulses was manipulated by varying the relative amplitude, pulse duration, and center wavelengths of Gaussian profiles. Our calculations revealed that the shape of laser pulses has a discernible impact on the dynamic evolution of electrons in excited states. Furthermore, our research indicated that different pulse profiles exhibit a maximum variation of 6.88% in the quantum yields of electronic wave packets near CIs. Our calculations demonstrate the influence of laser pulse waveform on excitation processes, providing a feasible method for exploring the coherent control of wave packets at conical intersections characterized by strong nonadiabatic coupling.

optics
Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material

Yiying Song,Shusen Zhao,Hongzhi He,Han Liang,Zhanfeng Dai,Xuechun Lin,Guling Zhang

DOI: https://doi.org/10.3390/photonics11020189

IF: 2.536

2024-02-19

Photonics

Abstract:Silicon Carbide (SiC) is the predominant substrate material for optoelectronic-integrated devices. However, it challenges the wafer-slicing process because of its high hardness, brittleness, and other material characteristics. Laser processing has gained prominence as the primary method, leveraging its merits of high efficiency, precision, and micro-destructiveness. In this study, a finite element method is applied to calculate the temperature field distribution resulting from the electric field of a Gaussian beam. The simulation considers laser propagation inside 4H-SiC, non-linear absorption, and spherical aberration induced by the refractive index of the material. The influence of laser pulse energy and focusing depth are considered. The results indicate that the modification depths decrease with the increasing focusing depth. With the increase of laser pulse energy, the depth of the modification layer increases continuously. Moreover, an experimental setup has been devised to furnish valuable references in validating the proposed model.

optics
Pulse-parameter Dependence of the Configuration Characteristics of a Micro-Structure in Fused SiO 2 Induced by Femtosecond Laser Pulses

L. Luo,C. Li,D. Wang,H. Yang,H. Jiang,Q. Gong

DOI: https://doi.org/10.1007/s003390100901

2002-01-01

Abstract:The fabrication of a micro-structures in fused SiO2 by femtosecond laser pulses was studied in the range of pulse duration 150∼500 fs, pulse energy 60 nJ to ∼7 μJ and wavelengths 400 nm and 800 nm. The characteristics of the cross section of the micro-structure were explained with the multiphoton-ionization and avalanche-ionization processes in the femtosecond laser-induced breakdown. The characteristics of the longitudinal length of the micro-structure relating to the direct-focusing and self-action effects are also discussed.
Nonlinearity in Power-Current Characteristics of Narrow-Pulse-Driven Algainp Laser Diodes

Y Ben,CZ Sun,S Xue,Y Luo,T Yagi,E Omura

DOI: https://doi.org/10.1109/jqe.2004.825118

IF: 2.5

2004-01-01

IEEE Journal of Quantum Electronics

Abstract:In this paper, a simple yet effective model is developed to analyze the nonlinearity in power-current characteristics, also known as "kinks," observed in AlGaInP selectively-buried-ridge (SBR) laser diodes driven by narrow pulses (similar to 10(-7) s). The model takes the temperature-induced waveguide as well as the carrier distribution into account, and the simulation results show good agreement with the experiments. The main factors influencing the kink behavior of SBR lasers are investigated based on this model, and it is believed to be of great help for the optimization AlGaInP laser structure for high-power applications.
Effects of Parameters in Femtosecond Laser Micromachining on Ablation of Silicon

Zhi Chen,Xing Fu,Na Geng,Xiaotang Hu

DOI: https://doi.org/10.1007/s12209-009-0040-3

2009-01-01

Abstract:A series of ablation experiments on silicon surface by femtosecond laser system of 775 nm and 150 fs duration pulses were carried out. The morphological characteristics and the associated effect in the ablation were tested by atomic force microscope (AFM), scanning electron microscope (SEM), focused ion beam (FIB), and the optic microscope. The single pulse threshold can be obtained directly. For the multiple pulses, the ablation threshold varies with the number of pulses applied to the surface due to the incubation effect. By analyzing the experimental data, the thresholds of laser fluences under various laser pulse numbers were obtained, and the relationships between ablation area and laser energy and laser pulse number were concluded. Meanwhile, the periodic ripple structure on silicon surface was found. Under the condition of certain laser power, the number of laser pulse can influence the formation of ripples.
Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes under Mutual Injection Locking

Changzheng Sun,Dong Liu,Bing Xiong,Yi Luo,Jian Wang,Zhibiao Hao,Yanjun Han,Lai Wang,Hongtao Li

DOI: https://doi.org/10.1109/jstqe.2015.2478817

IF: 4.9

2015-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:Modulation characteristics enhancement by mutual injection locking of monolithically integrated lasers is demonstrated. Resonance frequency as high as 34.3 GHz is recorded. The nonlinearity and chirp performances are simultaneously improved compared with free running state.

Influence of Electrical Conditions on Silicon Pulse Shaping and Modelocking

Modeling of a diode transverse-pumped cesium vapor laser

Influences of Operating Parameters on Deleterious Processes of Side-Pumped Cesium Vapor Laser Amplifiers with Flowing Medium

Shaping Current Waveforms for direct Modulation of Semiconductor Lasers

Modeling of a Diode Side Pumped Cesium Vapor Laser MOPA System

Effects of the pulse shape on the chirp compensation by using the semiconductor laser amplifiers

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Modeling of Pulsed Cs Vapor Lasers in Transversely Pumped Configuration

ESD Pulse Width Effect on RC-triggered NMOS with Power on or Off

Pulse Control of Passively Q-Switched Microchip Laser with Cw Pumping Modulation

Effect of Pumping Conditions on Output Characteristics of a Gain-Switched Nd:YVO4 Laser

Effects of tunable circuit parameters on pulsed discharge and input-output characteristics of a XeCl excimer laser

The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

The Impact of Pulse Shaping on Coherent Dynamics near a Conical Intersection

Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material

Pulse-parameter Dependence of the Configuration Characteristics of a Micro-Structure in Fused SiO 2 Induced by Femtosecond Laser Pulses

Nonlinearity in Power-Current Characteristics of Narrow-Pulse-Driven Algainp Laser Diodes

Effects of Parameters in Femtosecond Laser Micromachining on Ablation of Silicon

Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes under Mutual Injection Locking