Abstract:Abstract Laser micromachining has attracted considerable interest because of its wide range of applications across nearly all manufacturing sectors and mostly in semiconductors such as silicon. However, modern micro-manufacturing demands progressive product miniaturization, high accuracy, and high-precision material removal. For this purpose, a fundamental study of the interaction between ultrashort laser pulses and silicon will be valuable for studying ablation characteristics and ablation performance. The femtosecond laser pulse interaction with the silicon is divided into five parts: (a) the interaction of laser light with the carriers, (b) variation of the carrier density and carrier temperature, (c) energy exchange between carriers and lattice, (d) thermomechanical response of the material, and (e) ablation. The evolution of the carrier density and carrier-lattice energy coupling equation is solved simultaneously to determine the optimum value of the ablation width and ablation depth of femtosecond laser pulses on the silicon. The first time, 2D axial symmetry thermal and non-thermal ablation profiles were compared with the experimental result at fluence ranging from 0.75 to 9 J cm −2 at the wavelength of 515 nm and 180 fs laser on the silicon sample. A comparative study of damage thresholds from experiments and simulations is presented. The concordance between model calculations and experimental data demonstrates that fs laser ablation is thermal in nature in low fluence regime, whereas it is non- thermal in a high-fluence regime. Fundamental information such as the time evolution of the carrier density, carrier temperature evolution, and lattice temperature evolution can be obtained from the simulation results.

The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Laser-Induced Damage Threshold of Silicon in Millisecond, Nanosecond, and Picosecond Regimes

Time-resolved Temperature Measurement and Numerical Simulation of Millisecond Laser Irradiated Silicon

Thermal Shock of Silicon-Based Materials under Multi-Pulsed Intense Laser Radiation

Time-resolved Temperature Measurement and Numerical Simulation of Superposed Pulsed Nd:YAG Laser Irradiated Silicon

Modeling of pulsed laser irradiation of thin silicon layers

Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser.

Numerical Simulations of Germanium Nanofilm under Femtosecond Pulse Laser Heating

Numerical Simulation of Vaporization Effect of Long Pulsed Laser Interaction with Silicon

Laser-Induced Damage Threshold of Silicon under Combined Millisecond and Nanosecond Laser Irradiation

Thermal and non-thermal ablation mechanisms in crystalline silicon by femtosecond laser pulses: classical approach of the carrier density two temperature model

Three-temperature modeling of laser-induced damage process in silicon

Picosecond Pulse Laser Microstructuring of Silicon

Effect of Laser Parameters in the Micromachining of Silicon by Femtosecond Pulse Laser

Multi-Physics Coupling Simulation of Picosecond Pulsed Laser Ablation of Single-Crystal Silicon

The ultrashort pulse laser ablation model of silicon based on the generalized thermoelastic theory with spatio-temporal nonlocal effect

Numerical investigation of heat transfer in ultrafast laser processing of silicon material

Numerical simulation of the accumulative photo-thermal effect in silicon under illumination with sequential laser pulses

Sub-wavelength Temperature Probing in Near-Field Laser Heating by Particles.