Abstract:We present an atomistic-continuum model to simulate ultrashort-pulse laser melting processes in semiconductor solids on the example of silicon. The kinetics of transient nonequilibrium phase transition mechanisms is addressed with a molecular dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast diffusion of and heat conduction due to photoexcited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of freestanding Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the negative volume of melting of modeled Si material, −7.5%, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a fcc crystal structure.

Three-temperature modeling of laser-induced damage process in silicon

Wavelength dependence of laser-induced excitation dynamics in silicon

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Laser-Induced Damage Threshold of Silicon in Millisecond, Nanosecond, and Picosecond Regimes

Time-resolved Temperature Measurement and Numerical Simulation of Superposed Pulsed Nd:YAG Laser Irradiated Silicon

Modeling of pulsed laser irradiation of thin silicon layers

Laser-Induced Damage Threshold of Silicon under Combined Millisecond and Nanosecond Laser Irradiation

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Thermal and non-thermal ablation mechanisms in crystalline silicon by femtosecond laser pulses: classical approach of the carrier density two temperature model

On the Dynamic Behaviors of Silicon Single Crystal under Nanosecond Laser Irradiation

Thermal Damage of Monocrystalline Silicon Irradiated by Long Pulse Laser

The ultrashort pulse laser ablation model of silicon based on the generalized thermoelastic theory with spatio-temporal nonlocal effect

Numerical Simulation of Vaporization Effect of Long Pulsed Laser Interaction with Silicon

Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser.

Numerical Simulation Of Millisecond Laser-Induced Damage In Silicon-Based Positive-Intrinsic-Negative Photodiode

The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface

Time-resolved Temperature Measurement and Numerical Simulation of Millisecond Laser Irradiated Silicon

Atomistic-continuum modeling of short laser pulse melting of Si targets

Ultra-Short Pulsed Laser-Induced Damage in Inorganic Silicon Materials

Energy Transfer Between Femtosecond Laser and Silicon Carbide

Single-Shot Multi-Stage Damage and Ablation of Silicon by Femtosecond Mid-infrared Laser Pulses