Abstract:We present an atomistic-continuum model to simulate ultrashort-pulse laser melting processes in semiconductor solids on the example of silicon. The kinetics of transient nonequilibrium phase transition mechanisms is addressed with a molecular dynamics method at atomic level, whereas the laser light absorption, strong generated electron-phonon nonequilibrium, fast diffusion of and heat conduction due to photoexcited free carriers are accounted for in the continuum. We give a detailed description of the model, which is then applied to study the mechanism of short laser pulse melting of freestanding Si films. The effect of laser-induced pressure and temperature of the lattice on the melting kinetics is investigated. Two competing melting mechanisms, heterogeneous and homogeneous, were identified. Apart from the classical heterogeneous melting mechanism, the nucleation of the liquid phase homogeneously inside the material significantly contributes to the melting process. The simulations showed, that due to the open diamond structure of the crystal, the laser-generated internal compressive stresses reduce the crystal stability against the homogeneous melting. Consequently, the latter can take a massive character within several picoseconds upon the laser heating. Due to the negative volume of melting of modeled Si material, −7.5%, the material contracts upon the phase transition, relaxes the compressive stresses, and the subsequent melting proceeds heterogeneously until the excess of thermal energy is consumed. The threshold fluence value, at which homogeneous nucleation of liquid starts contributing to the classical heterogeneous propagation of the solid-liquid interface, is found from the series of simulations at different laser input fluences. For the example of Si, the laser melting kinetics of semiconductors was found to be noticeably different from that of metals with a fcc crystal structure.

Wavelength dependence of laser-induced excitation dynamics in silicon

Three-temperature modeling of laser-induced damage process in silicon

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Influence of Point Defects on Laser-Induced Excitation in Silicon

Thermal and non-thermal ablation mechanisms in crystalline silicon by femtosecond laser pulses: classical approach of the carrier density two temperature model

Thermal Damage of Monocrystalline Silicon Irradiated by Long Pulse Laser

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Saturable absorption in highly excited silicon and its suppression at the surface

The Effect of Different Pulse Widths on Lattice Temperature Variation of Silicon under the Action of a Picosecond Laser

Laser-induced Damage in a Silicon-Based Photodiode by MHz Picosecond Laser

Modelling ultrafast non-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal Silicon-Carbide with femtosecond laser pulses

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse

Impact of Nonlinear Effects on the Silicon-Based Waveguides and Microring Resonators

Wavelength dependence of femtosecond laser-induced damage threshold of optical materials

Tuned ionic mobility by Ultrafast-laser pulses in Black Silicon

Femtosecond-Laser-Ablation Dynamics in Silicon Revealed by Transient Reflectivity Change

Excitation of the electronic subsystem of silicon by femtosecond laser irradiation

Ultrafast Laser-Induced Elastodynamics in Single Crystalline Silicon Part I: Model Formulation

The Experimental and Modeling Study of Femtosecond Laser-Ablated Silicon Surface

Atomistic-continuum modeling of short laser pulse melting of Si targets

[Emission Spectrum Analysis of Laser Ablation on the Silicon Surface].