Abstract:The performance of complementary metal oxide semiconductor (CMOS) circuits is affected by electromagnetic interference (EMI), and the study of the circuit’s ability to resist EMI will facilitate the design of circuits with better performance. Current-mode CMOS circuits have been continuously developed in recent years due to their advantages of high speed and low power consumption over conventional circuits under the deep submicron process; their EMI resistance performance deserves further study. This paper introduces three kinds of NOT gate circuits: conventional voltage-mode CMOS, MOS current-mode logic (MCML) with voltage signal of input and output, and current-mode CMOS with current signal of input and output. The effects of EMI on three NOT gate circuits are investigated using Cadence Virtuoso software simulation, and a disturbance level factor is defined to compare the effects of different interference terminals, interference signals’ waveforms, and interference signals’ frequencies on the circuits in the 65 nm process. The relationship between input resistance and circuit EMI resistance performance is investigated by varying the value of cascade resistance at the input of the current-mode CMOS circuits. Simulation results show that the current-mode CMOS circuits have better resistance performance to EMI at high operating frequencies, and the higher the operating frequency of the current-mode CMOS circuits, the better the resistance performance of the circuits to EMI. Additionally, the effects of different temperatures and different processes on the resistance performance of three circuits are also studied. In the temperature range of −40 °C to 125 °C, the higher the temperature, the weaker the resistance ability of voltage-mode CMOS and MCML circuits, and the stronger the resistance ability of current-mode CMOS circuits. In the 28 nm process, the current-mode CMOS circuit interference resistance ability is relatively stronger than that of the other two kinds of circuits. The relative interference resistance ability of voltage-mode CMOS and MCML circuits in the 28 nm process is similar to that of the 65 nm process, while the relative interference resistance ability of current-mode CMOS circuits in the 28 nm process is stronger than that of the 65 nm process. This study provides a basis for the design of current-mode CMOS circuits against EMI.

DEVICE SIMULATION OF EFFECTS OF MICROWAVE ELECTROMAGNETIC INTERFERENCE ON CMOS RS FLIP-FLOPS

Effect of electromagnetic interference on CMOS transmission gates

An Electro-Thermal Analysis of Lateral Double-diffused MOSFET(LDMOS) Using FEM

Synergistic Effects Simulation of MOSFET by Control Volume Finite Element Method

Transient responses analysis of some ultra-wideband fliters in the presence of wideband electromagnetic pluses

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Suppressing Intentional Electromagnetic Interference (IEMI) in Wireless Communication System Using Complex Signal Spectrum Shifting Technique

Lumped-Network FDTD Method for Simulating Transient Responses of RF Amplifiers Excited by Intentional Electromagnetic Interference Signals

Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses

Theoretical models for microwave pulse induced thermal failure in CMOS integrated circuits

Device Simulation Studies on Latch-Up Effects in CMOS Inverters Induced by Microwave Pulse

ESD Pulse Width Effect on RC-triggered NMOS with Power on or Off

Modeling and Analysis of Large-Signal RFI Effects in MOS Transistors

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Thermal Transient Response of SOI LDMOSFET under Electromagnetic Interference

Research on Electromagnetic Interference Resistance Performance of Three Kinds of CMOS Inverters

Speeding up the simulation of the semiconductor device under microwave interference

A Novel Integrated Approach for Simulation of Electromagnetic Susceptibility Problem

Electromagnetic Compatibility in Leakage Current of CMOS Integrated Circuits

Electromagnetic Susceptibility Analysis In Device Level With Numerical Technique Based On Electric Field Integral Equation