Abstract:As process technologies advance into deep sub-micrometer and nanometer scale, the charged device model (CDM) is now considered an important stress model for defining electrostatic discharge (ESD) reliability of integrated circuits. Thus the turn-on time of the ESD elements used in the protection circuit becomes important. At this time, there is no good method to evaluate the CDM ESD device turn-on speed. Equipment like VF-TLP and CC-TLP are too complicated and not precise for this purpose. A new method to evaluate the ESD device turn-on speed is presented in this paper. Based on this novel approach, some CDM ESD devices are analyzed based on the transmission line pulsing (TLP) tester. The designed devices include diodes, grounded-gate NMOS, SCRpsilas (silicon controlled rectifier), and Modified-Lateral SCRpsilas (MLSCR). The rising time of the pulse is set at 200 psec to accurately simulate real CDM pulses. The time-dependent voltage and current data are extracted and calculated from each pulse in the Time Domain Reflection (TDR) TLP tester. Two new ESD turn-on conditions are proposed and defined based on the transient currents in order to compare the relative speed of different ESD devices. The results show that the normalized turn-on time of different devices with various sizes and finger numbers do not correlate well with that obtained under the normal DC conditions, and the same device shows different turn-on characteristics under different pulses. These results enable devices to be designed for improved CDM ESD protection levels, and the present method can be used for ESD design for future nanometer technologies.

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

Investigation of the Trigger Voltage Walk-In Effect in Ldmos for High- Voltage Esd Protection

Study of Turn-on Characteristics of SCRs for ESD Protection with TDR-O and TDR-S TLPs

Research on single event latch-up effect of CMOS based on TCAD

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Study of single event latch-up effect of TDC-GP1 by pulsed laser simulation test

Comparative Study of Reliability Degradation Behaviors of LDMOS and LDMOS-SCR ESD Protection Devices

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Trigger voltage walk-in effect of ESD protection device in HVCMOS

An Investigation on Capacitance-Trigger ESD Protection Devices for High Voltage Integrated Circuits

A novel straight through-MOS-triggered SCR for on-chip ESD protection

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Effect of poly-silicon gate on ESD protection performance of LDMOS-SCR devices

Study of Current Saturation Behaviors in Dual Direction SCR for ESD Applications.

Comparison of different MOS-triggered SCR structures for on-chip ESD protection

The Influence of an LIGBT on CMOS Latch Up in Power Integrated Circuit

Investigation of Esd Protection Strategy in High Voltage Bipolar-Cmos-Dmos Process

A new criterion for transient latchup analysis in bulk CMOS

Impact of TID on Latch Up Induced by Pulsed Irradiation in CMOS Circuits

Experimental Study of Transient Dose Rate Effects of Two Level-Shifting Transceivers and Simulations on Their ESD Circuits