Abstract:The device utilized in space application demands reliable and stable static-random-access-memory (SRAM) circuits for uninterrupted and secure operation. In this paper, we have realized radiation hardened SRAM cell using dopingless transistor (DLT) and compared its performance with junctionless transistor (JLT) SRAM cell for secure and reliable operation. For realizing DL and JLT based SRAM cell, the device–circuit co-design methodology is incorporated. To reduce the impact of single event upset (SEU), the radiation hardening by design (RHBD) approach is deployed. In this technique, the resistor–capacitor (RC) circuit or RC feedback paths are connected between the input and output of cross-coupled inverter pair of SRAM cell. Using RHBD technique, the soft error (SE) sensitivity is measured and found SRAM realized with JLT and DLT are secured from the bit flipping due to SE effect. Further, the stability and performance of SRAM cells are evaluated. It is shown that hold static noise margin (HSNM) of DLT SRAM cell is improved by 7.4% in contrast to JLT SRAM cell. While, the read and write access time of DLT SRAM cell are improved by ~ 23.6% and ~ 52.4% than JLT SRAM cell. In addition, standby leakage power of DLT SRAM cell is reduced by ~ 76% than JLT SRAM. Thus, DLT SRAM cell performs faster read and write operation and consume less power which is useful for designing high-speed energy-efficient system.

Experimental Investigation into Radiation-Hardening-by-design (RHBD) Flip-Flop Designs in a 65nm CMOS Process

Implementation of Radiation Hardened Flip-Flops Based on Novel Fishbone Layouts

Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-Nm UTBB FD-SOI Technology

A Novel SEU-Hardened D Flip-Flop

A Novel Self-Recoverable and Triple Nodes Upset Resilience DICE Latch

Double Node Upsets Hardened Latch Circuits

Radiation-hardened latch design with triple-node-upset recoverability

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

Test and Inquiry of FPGA SEU-Hardening by TMR

A Novel Highly Reliable and Low-Power Radiation Hardened SRAM Bit-Cell Design

Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

Single-Event-Transient Resilient Memory for DSP in Space Applications

A Novel High-Density Single-Event Upset Hardened Configurable SRAM Applied to FPGA

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

Design of Radiation Hardened SRAM Cell using Dopingless Transistor for Space Applications

The Research of FPGA Reliability Based on Redundancy Methods

A Novel SEU Tolerant Memory Cell for Space Applications.

Design of SEU Tolerant Read Circuit for Non-Volatile Memories with high reliability

Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

Design of polarity hardening SRAM for mitigating single event multiple node upsets

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results