Abstract:Complementary Metal-Oxide-Semiconductor (CMOS) image sensors (CISs), known for their high integration, low cost, and superior performance, have found widespread applications in satellite and space exploration. However, the readout circuits of pixel arrays are vulnerable to functional failures in complex or intense radiation environments, particularly due to transient γ radiation. Using Technology Computer-Aided Design (TCAD) device simulations and Simulation Program with Integrated Circuit Emphasis (SPICE) circuit simulations, combined with a double-exponential current source fault injection method, this study investigates the transient dose rate effect (TDRE) on a typical readout circuit of CISs. It presents the variations in the photoelectric signal under different dose rates and at different occurrence moments of the TDRE. The results show that, under low dose rates, the CIS readout circuit can still perform data acquisition and digital processing, with the photoelectric signal exhibiting some sensitivity to the occurrence moment. At high dose rates, however, the photoelectric signal not only remains sensitive to the occurrence moment but also shows significant discreteness. Further analysis of the CIS readout circuit sequence suggests that the occurrence moment is a critical factor affecting the circuit's performance and should not be overlooked. These findings provide valuable insights and references for further research on the TDRE in circuits.

Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Study of the Dose Rate Effect of 180 Nm Nmosfets

The Total Ionizing Dose Response of a DSOI 4kb SRAM

Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Soft-error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator

A Study on the Timing Sensitivity of the Transient Dose Rate Effect on Complementary Metal-Oxide-Semiconductor Image Sensor Readout Circuits

Analysis of TID Failure Modes in SRAM-Based FPGA under Gamma-Ray and Focused Synchrotron X-Ray Irradiation

Heavy-ion-induced permanent damage in ultra-deep submicron fully depleted SOI devices

Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation