Abstract:In this article, the degradation mechanisms of radiation-hardened vertical double-diffused MOSFETs (VD-MOSFET) experiencing gamma ray irradiation and annealing sequentially experiment device and simultaneously experiment device (Si-ED) are studied and compared. Experiments demonstrate that the Si-ED irradiated with gate bias (+12 V) has a lower oxide-trapped charges increment ( $Delta {N}_{ ext {ot}})$ and higher interface states increment ( $Delta {N}_{ ext {it}})$ , compared to those of sequential experiment device (Se-ED). However, for Si-ED irradiated with drain bias (200 V), it shows lower $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ than those of Se-EDs, which is similar to that observed in the case of devices irradiated with three-terminal bias (200-V drain bias, −10-V gate bias, and source grounded). In addition, for all cases, it is seen that the drain-biased devices own a larger $Delta {N}_{ ext {ot}}$ but a smaller $Delta {N}_{ ext {it}}$ , compared to those of gate-biased ones, and the three-terminal-biased devices show the lowest, especially in Si-ED. As a result, the variations of $Delta {N}_{ ext {ot}}$ and $Delta {N}_{ ext {it}}$ could cause different degradations of threshold voltage, breakdown voltage, leakage current, and ON-state resistance of devices, which would inevitably threaten the proper functioning of electrical systems. Moreover, in this article, it is concluded that the existing standard, i.e., accelerated annealing after irradiation, cannot reflect the actual radiation reliability of devices. Other evaluation methods regarding total ionizing dose (TID) need to be further explored comprehensively.

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Evaluation of Single-Event-Transient Effects in Reconfigurable Field Effect Transistor Beyond 3 Nm Technology Node

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Three-Dimensional Simulation of Total Dose Effects on Ultra-Deep Submicron Devices

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

Study of the Dose Rate Effect of 180 Nm Nmosfets

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate