Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation
Tobias Vogel,Alexander Zintler,Nico Kaiser,Nicolas Guillaume,Gauthier Lefèvre,Maximilian Lederer,Anna Lisa Serra,Eszter Piros,Taewook Kim,Philipp Schreyer,Robert Winkler,Déspina Nasiou,Ricardo Revello Olivo,Tarek Ali,David Lehninger,Alexey Arzumanov,Christelle Charpin-Nicolle,Guillaume Bourgeois,Laurent Grenouillet,Marie-Claire Cyrille,Gabriele Navarro,Konrad Seidel,Thomas Kämpfe,Stefan Petzold,Christina Trautmann,Leopoldo Molina-Luna,Lambert Alff
DOI: https://doi.org/10.1021/acsnano.2c04841
IF: 17.1
2022-09-27
ACS Nano
Abstract:Hafnium oxide- and GeSbTe-based functional layers are promising candidates in material systems for emerging memory technologies. They are also discussed as contenders for radiation-harsh environment applications. Testing the resilience against ion radiation is of high importance to identify materials that are feasible for future applications of emerging memory technologies like oxide-based, ferroelectric, and phase-change random-access memory. Induced changes of the crystalline and microscopic structure have to be considered as they are directly related to the memory states and failure mechanisms of the emerging memory technologies. Therefore, we present heavy ion irradiation-induced effects in emerging memories based on different memory materials, in particular, HfO2-, HfZrO2-, as well as GeSbTe-based thin films. This study reveals that the initial crystallinity, composition, and microstructure of the memory materials have a fundamental influence on their interaction with Au swift heavy ions. With this, we provide a test protocol for irradiation experiments of hafnium oxide- and GeSbTe-based emerging memories, combining structural investigations by X-ray diffraction on a macroscopic, scanning transmission electron microscopy on a microscopic scale, and electrical characterization of real devices. Such fundamental studies can be also of importance for future applications, considering the transition of digital to analog memories with a multitude of resistance states.