Abstract:The total ionizing mymargin dose mymargin (TID) effect is systematically investigated in the double silicon-on-insulator (DSOI) static random access memory (SRAM) circuits, taking into consideration: silicon film thicknesses, floating/unfloating body, and back-gate bias. It is experimentally demonstrated that the SRAM circuits with thinner silicon layer (45 nm) and floating-body transistors exhibit better radiation tolerance, with a corresponding decrease in read current by 3.8% and an increase in access time by 34.7%. This can be attributed to enhanced back-gate tuning ability, which increased from 2.17% to 8.62% for nMOS and from 8.6% to 34.7% for pMOS. A back-gate bias of -3 V is sufficient to compensate for the degradation with total dose accumulated up to 1 Mrad(Si). Technology computer-aided design (TCAD) simulations indicate that the electric field gradually saturates near the first buried oxide (BOX) for a thicker silicon layer, weakening the modulation ability of back-gate bias. Compared with floating devices, the tuning range is reduced for devices with body-tie (unfloating body), and higher back-gate voltages can significantly strengthen the electric field in the channel, around three times. This results in a substantial increase in the channel current, implying that the back-gate bias cannot be increased unrestrictedly.

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

Tid Radiation Response of 3-D Vertical Gaa Sonos Memory Cells

TID Characterization of 0.13&#x00b5;m SONOS Cell in 4mb NOR Flash Memory

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

The Impacts of Total Ionizing Dose Irradiation on NOR Flash Memory

Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Investigation of Total Ionizing Dose (TID)Effect on High-Voltage Circuits in Flash Memory

Total Ionizing Dose (TID) Effects on $\hbox{tao}_{x}$ -Based Resistance Change Memory

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Novel High-Speed Radiation Hardened Sense Amplifier for SOI Based SONOS Memory

An 8-Level 3-Bit Cell Programming Technique in Nor-Type Nano-Scaled Sonos Memory Devices

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Total Ionizing Dose and Synergistic Effect of Magnetoresistive Random Access Memory

Radiation Hardened Read Circuit with High Reliability for SOI Based SONOS Memory

The effect of oxide scaling on ionising radiation response of sense-switch flash cells

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation