Abstract:The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradation of the devices. The H bond is broken during the radiation process, which reduces the participation of H atoms in the later stage of electrical stress, thereby reducing the degradation caused by electrical stress. The positive charges of the oxide layer generated by radiation neutralize part of the tunneling electrons caused by electrical stress, and consume some of the electrons that react with the H bond, resulting in weaker degradation. In addition, the positive charges in shallow trench isolation (STI) generated by radiation create parasitic leakage paths at the interfaces of STI/Si, which increase the leakage current and reduce the positive shift of the threshold voltage. The parasitic effect generated by the positive charges of STI makes the threshold voltage of the narrow-channel device degrade more, and due to the gate edge effect, the threshold voltage of short-channel devices degrades more.

Investigation of Total Ionizing Dose (TID)Effect on High-Voltage Circuits in Flash Memory

Investigation Of Tid Degradation Of High Voltage Circuits In Flash Memory

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Total Ionizing Dose (TID) Effects on $\hbox{tao}_{x}$ -Based Resistance Change Memory

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

The accelerated TID degradation induced by neutron irradiation on CMOS microprocessor

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO x /Pt RRAM device.

The Impacts of Total Ionizing Dose Irradiation on NOR Flash Memory

Total Ionizing Dose and Synergistic Effect of Magnetoresistive Random Access Memory

Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions

Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

Primary Total Ionizing Dose Effect Studies on Xilinx SoC Irradiated with 60co Γ Rays

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Combined Effect of TID Radiation and Electrical Stress on NMOSFETs