Abstract:With the rapid development of the aviation industry, an increasing number of metal oxide semiconductor field effect transistors (MOSFETs) are being used in aerospace equipment. The total ionizing dose (TID) test has been developed for silicon power devices to evaluate their space usage capabilities. To evaluate the TID tolerance of silicon carbide (SiC) devices, two 1200V SiC MOSFET power devices with planar and trench structures were aged gamma irradiation environment, and the degradation of static properties, such as the transfer characteristics, output characteristics, and breakdown voltage were analyzed. The comparison of TID effects was made between planar and trench MOSFETs under gate bias (i.e., $\mathrm{V}_{\text{gs}} = 18$ V and $\mathrm{V}_{\text{ds}} = 0$ V) and zero bias ( $\mathrm{V}_{\text{gs}} = 0$ V and $\mathrm{V}_{\text{ds}} = 18$ V) conditions. The experimental results show that: (1) The trench MOSFET was more sensitive to TID effects, due to its unique structure and thick gate oxide. (2) The severity of TID effect under gate bias was mainly caused by the electric field within the gate oxide, which exacerbated the TID effect as compared to zero bias. (3) The degradation mechanisms of TID effect with increasing dose is illustrated, and several radiation hardening methods are proposed, including thinning the gate oxide, improving the quality of the gate oxide, and using insulating dielectrics with a wider bandgap instead of SiO2. Therefore, this work will be helpful to the explanation and radiation hardening of 1200V SiC MOSFET power devices under TID effects.

The accelerated TID degradation induced by neutron irradiation on CMOS microprocessor

Synergistic Effect of Neutron and Gamma Irradiation on Cmos Integrated Circuits

Impact of TID on the Transient Ionizing Irradiation Response of CMOS Circuits

The Impact of Reactor Neutron Irradiation on Total Ionizing Dose Degradation in MOSFET

Gamma Irradiation Induced Total Dose Effects of EE80C196KC20 Single Chip Microprocessor

Total Ionizing Dose (TID) Effects on Finger Transistors in a 65nm CMOS Process

Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Special Degradation Effects of 60co Γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizing-dose Irradiation under Gate Voltage Stress

Impact of TID on Latch Up Induced by Pulsed Irradiation in CMOS Circuits

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

Combined Reactor Neutron Beam and 60co Γ-Ray Radiation Effects on CMOS APS Image Sensors

Total Ionizing Effects on Static Characteristics of 1200V SiC MOSFET Power Devices with Planar and Trench Structures

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Effects of Total Ionizing Dose on Transient Ionizing Radiation Upset Sensitivity of 40–180 Nm SRAMs

Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices

Investigation of Total Ionizing Dose (TID)Effect on High-Voltage Circuits in Flash Memory

High Displacement Damage Dose Effects in Radiation Hardened CMOS Image Sensors

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation