The Impacts of Total Ionizing Dose Irradiation on NOR Flash Memory

Jinshun Bi,Jin Li,Lanlong Ji,Hongyang Hu,Ming Liu

DOI: https://doi.org/10.1109/icsict.2016.7998692

2016-01-01

Abstract:The impacts of total ionizing dose by cobalt60 on the 4 Mb Serial Peripheral Interface NOR Flash memory are studied in detail. Electrical parameters degradation and unidirectional upsets are demonstrated with physical explanations.

What problem does this paper attempt to address?

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

FengYing Qiao,LiYang Pan,Xiao Yu,HaoZhi Ma,Dong Wu,Jun Xu

DOI: https://doi.org/10.1007/s11432-013-4982-7

2014-01-01

Science China Information Sciences

Abstract:In this paper, we have studied the total ionizing dose (TID) radiation response up to 2 Mrad(Si) of silicon-oxide-nitride-oxide-silicon (SONOS) memory cells and memory circuits, fabricated in a 130 nm complimentary metal-oxide-semiconductor (CMOS) SONOS technology. We explored the threshold voltage (V T ) degradation mechanism and found that the V T shifts of SONOS cells depend on the charge state; simply programming the cell to a higher V T cannot compensate for the radiation induced V T loss. The off-state current (I off) increase in the SONOS cell is also studied in this paper. Both V T and I off degradation would affect the memory system. Read data failures are mainly caused by V T shifts under irradiation, and program and erase failures are mainly caused by increased I off, which overloads the charge pumping circuit. By varying the reference current, our 4 Mb NOR flash chip has the potential to survive a radiation dose of 1 Mrad(Si) in read mode.
Investigation of Total Ionizing Dose (TID)Effect on High-Voltage Circuits in Flash Memory

Da-wei YANG,Li-fang LIU,Feng-ying QIAO,Hong LU,Li-yang PAN

DOI: https://doi.org/10.3969/j.issn.1002-2279.2014.06.002

2014-01-01

Microprocessors

Abstract:TheTIDradiationdegradationofhigh-voltagecircuitsintheflashmemorycircuitsystem is studied.We evaluates the effect of TID radiation to the internal high -voltage charge pumpings and their periphery circuits.The results show that the functional failures of charge pumping circuits are induced by the increasing leakage of memory array and high-voltage transistors after radiation,and leads to operation failure from the programming.
Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Jiongjiong Mo,Hua Chen,Liping Wang,Faxin Yu

DOI: https://doi.org/10.1007/s10836-017-5647-z

2017-01-01

Journal of Electronic Testing

Abstract:In this paper, Total Ionizing Dose (TID) and Single Event Burnout (SEB) effects are investigated on self-developed power VDMOS devices with breakdown voltage (BV) of 200 V. Different inter layer dielectrics (ILD) including Borophosphosilicate glass (BPSG) and Si3N4, and different passivation layers including Si3N4 and SiO2 are tested to evaluate their radiation hardness. The TID results indicate that the threshold voltage VTH of VDMOS is negatively shifted after radiation, and can barely be recovered by post TID annealing. As an ILD layer, Si3N4 is proved to be better than BPSG with less VTH shift. Passivation layer can also influence the TID hardness, which increases with the layer thickness. Heavy ion radiation tests indicate that the devices with different ILD and passivation designs can barely influence the SEB effects. All tested devices with normal breakdown voltage of 200 V cannot survive at VDS more than 80 V under heavy ion radiation.
Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

W. Chen,R. Fang,H. J. Barnaby,M. B. Balaban,Y. Gonzalez-Velo,J. L. Taggart,A. Mahmud,K. Holbert,A. H. Edwards,M. N. Kozicki

DOI: https://doi.org/10.1109/tns.2016.2618359

IF: 1.703

2017-01-01

IEEE Transactions on Nuclear Science

Abstract:In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.
Investigation Of Tid Degradation Of High Voltage Circuits In Flash Memory

fengying qiao,liyang pan,xuemei liu,haozhi ma,dong wu,jun xu

DOI: https://doi.org/10.1109/IIRW.2013.6804186

2013-01-01

Abstract:the total ionizing dose (TID) radiation response of a flash memory circuit including high voltage (HV) periphery was studied. We show that functional failure of the charge pumps (CP) is mostly caused by an increased load current, due to radiation induced leakage current in the HV pass transistors. This leads to a failure to program/erase the array in turn.
Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory

Yihang Du,Lin Gu,Zhuangzhuang Wang,Chun Yao,Xiaodong Mu,Dongling Zhong

DOI: https://doi.org/10.1007/s10854-023-11889-3

2024-01-21

Journal of Materials Science Materials in Electronics

Abstract:In this letter, the effects of floating gate (FG) implantation annealing for 4Xnm NOR-flash on the memory flash physical structure and electrical characteristics are investigated. The wafer of which FG implantation annealing put before pad nitride deposition suffers bin9 fail issues that result from cell-active area damage. The formation mechanism of surface defects caused by the reversible reaction of solid-state negative SiO 2 , polysilicon, and gaseous SiO under high temperature and low temperature is investigated in detail. After the process optimization, the surface defects are significantly reduced and the yield rate is greatly improved.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
The accelerated TID degradation induced by neutron irradiation on CMOS microprocessor

Xiao-Ming Jin,Ru-Yu Fan,Wei Chen,Yan Liu

DOI: https://doi.org/10.1109/ICSICT.2010.5667290

2010-01-01

Abstract:This paper presents an experimental study of total ionizing dose (TID) characterization of a CMOS microprocessor, which has been pre-exposed to different level of neutron fluence. The power supply current and output voltage of the IO port and pulse width modulation (PWM) are found to be sensitive in ionizing radiation test. Experimental results show that neutron irradiation affects subsequent TID behavior. The mechanism of this synergistic effect is discussed based on the degradation of basic transistor and schematic circuit diagram of IO port. The underlying neutron enhanced TID sensitivity may become significant under concurrent radiation environment.
Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Anni Cao,Xin Li,Liang Wang,Jianpeng Zhang,Chunliang Gou,Liquan Liu,Bi Wang,Xing Zhang,Yuanfu Zhao

DOI: https://doi.org/10.1109/APCCAS55924.2022.10090320

2022-01-01

Abstract:Magnetic Random Access Memory (MRAM) is regarded as one of the most promising memory solutions for space missions since the storage mechanism of magnetic tunnel junction (MTJ) as the memory unit is naturally insensitive to the radiation effects. For the application of highly reliable MRAM., the total dose and ion beam radiation responses of a commercial STT-MRAM are evaluated in this work. The results indicate that MTJ is inherently radiation tolerant, while the peripheral circuit exhibits soft errors during ion beam irradiation. We analyze the single event effect (SEE) and look into the soft errors caused by the single event upset (SEU). Finally, considering the special STT-MRAM architecture, possible inducements of the experimental phenomena are discussed.
X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

P. F. Wang,E. X. Zhang,K. H. Chuang,W. Liao,H. Gong,P. Wang,C. N. Arutt,K. Ni,M. W. McCurdy,I. Verbauwhede,E. Bury,D. Linten,D. M. Fleetwood,R. D. Schrimpf,R. A. Reed

DOI: https://doi.org/10.1109/tns.2017.2789160

IF: 1.703

2018-01-01

IEEE Transactions on Nuclear Science

Abstract:Total ionizing dose effects are investigated on a physically unclonable function (PUF) based on CMOS breakdown. Devices irradiated to 2 Mrad(SiO2) show less than 11% change in current ratio at 1.2 V. The read-out window of programmed PUFs decreases significantly at high-dose proton irradiation, and then recovers back to the original value after annealing. The proton test results for the pFET selector, the unbroken nFET, and the broken nFET indicate that the threshold-voltage shift of the pFET selector contributes mainly to the degradation of the PUF.
Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Golnaz Korkian,Francisco J. Franco,Juan C. Fabero,Manon Letiche,Yolanda Morilla,Helmut Puchner,Hortensia Mecha,Juan A. Clemente,Daniel Leon,Pedro Martin-Holgado

DOI: https://doi.org/10.1109/access.2022.3217527

IF: 3.9

2022-11-14

IEEE Access

Abstract:In New Space, the need for reduced cost, higher performance, and more prompt delivery plans in radiation-harsh environments have motivated spacecraft designers to use Commercial-Off-The-Shelf (COTS) memories and emerging technology devices. This paper investigates the behavior of state-of-the-art memories manufactured in emerging technologies, including Ferroelectric Random-Access Memory (FRAM), Resistive Random-Access Memory (ReRAM), and Magnetic Random-Access Memory (MRAM), against radiation effects in static and dynamic modes. Radiation-ground tests were conducted under 15-MeV and 1-MeV protons, thermal and 14.8-MeV neutrons leading to various categories of radiation effects. Experimental results will show clear evidence of the robustness of bitcells manufactured using these emerging technologies against radiation, but at the same time, some susceptibility in these devices to suffer radiation effects when working in dynamic mode. Experimental results with the CY15B102Q and CY15B104Q FRAMs (Infineon Technologies), the MB85AS4MT, and MB85AS8MT ReRAMs (Fujitsu), and the MR10Q010CSC and MR25H40CDF MRAMs (Everspin) will be presented and discussed.

computer science, information systems,telecommunications,engineering, electrical & electronic
Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells

Qiwen Zheng,Jiangwei Cui,Yudong Li,Qi Guo

DOI: https://doi.org/10.1109/tns.2024.3360485

IF: 1.703

2024-03-19

IEEE Transactions on Nuclear Science

Abstract:Impact of total ionizing dose (TID) irradiation on Static Noise Margin (SNM) of 22 nm Ultrathin Body and Buried oxide (BOX) Fully Depleted Silicon-On-Insulator (UTBB FD-SOI) 6-T static random-access memory (SRAM) cells is investigated in this article. TID effect on SNM was measured by the single SRAM cell test structure allowing precise measurement of cell SNM under hold, read, and write modes. Experimental results show that SNM of 22 nm UTBB FD-SOI SRAM cell is significantly decreased by TID. And read SNM is more vulnerable to irradiation, even to be lowered down 0 mV at 500 krad(Si), leading to the read functionality failure. The bias-dependent TID induced threshold voltage shift is responsible for the significant SNM decrease. Moreover, the TID effect on SNM, including transistor-to-transistor variation caused by within-die process and TID damage variability, is explored by Monte Carlo simulation, illustrating that the TID effect on SNM will be underestimated by measurement of a limited number of SRAM cells.

engineering, electrical & electronic,nuclear science & technology
Radiation Effects in Advanced and Emerging Nonvolatile Memories

Matthew J. Marinella

DOI: https://doi.org/10.1109/tns.2021.3074139

IF: 1.703

2021-05-01

IEEE Transactions on Nuclear Science

Abstract:Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.

engineering, electrical & electronic,nuclear science & technology
Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Yl Liu,Xy Liu,Hf Sun,Zs Han,H Qian

2001-01-01

Abstract:This paper describes the total dose radiation performance of CMOS/SOI 4Kb SRAMs fabricated in a radiation hardened partially depleted SOI CMOS technology. The SRAM adopts 1Kx4 architecture. It achieves a fast access time 30ns and chip size 3.6mmx3.84mm. Memory functionality does well after a total dose irradiation up to 5x10(5) rad(Si) under 3V power supply. This meets the needs in military and aerospace fields. It is the first time that the radiation effects on Sol VLSI were investigated in China.
Primary Total Ionizing Dose Effect Studies on Xilinx SoC Irradiated with 60co Γ Rays

Yao Zhang,Xin Du,Xuecheng Du,Dongsheng He,Lingang Zhang,Chaohui He,Yonghong Li,Hang Zang,Shuhuan Liu,Xinzan Liu,Wei Chen,Yunyun Fan,Cen Xiong,Du Tang

DOI: https://doi.org/10.4028/www.scientific.net/amm.678.252

2014-01-01

Applied Mechanics and Materials

Abstract:We designed radiation effect experimental system including current measurement section and functional test section for Xilinx Zynq-7010 System on chip (SoC) and performed the Total Ionizing Dose (TID) experiment irradiated by Co60 γ-source on the chip. At the dose rate of 0.04 Gy(Si)/s, the total dose of 1.69 kGy(Si), the current value in the experiment increased first and then decreased. The test board got functional interruption at the gamma dose of 1.69 kGy(Si). The function of the board normalized after room temperature annealing and 70°C high temperature annealing except that the current value decreased by 28% compared to the current before irradiation. The mechanisms for the first TID test results on Xilinx SoC were deduced and discussed.
Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

Tongde Li,Jingshuang Yuan,Yang Bai,Chunqing Yu,Chunliang Gou,Lei Shu,Liang Wang,Yuanfu Zhao

DOI: https://doi.org/10.3390/electronics12143149

IF: 2.9

2023-07-21

Electronics

Abstract:This paper presents an experimental study on the high-dose-rate transient ionizing radiation response and influencing factors of a Nano-Scale Fully Depleted Silicon-On-Insulator (FDSOI) D flip-flops (DFFs) circuit. Results indicate that data errors occur in DFFs at the lowest dose rate of 4.70 × 1011 rad(Si)/s in experiments, and the number of data errors shows a nonlinear increasing trend with the increase in dose rate and supply voltage. Three-dimensional technology computer-aided design (TCAD) simulations were conducted to analyze the transient photocurrent and charge collection mechanism at advanced process. The simulation results indicated that the charge collection efficiency is heightened with an increase in supply voltage, resulting in the higher photocurrent. This plays a major role in the process of charge collection for Ultra-Thin Body and Buried oxide (UTBB) FDSOI technology. The investigation into the high-dose-rate transient ionizing radiation effect (HDR-TIRE) in Nano-Scale FDSOI DFFs will aid in the assessment and application of advanced integrated circuits in aerospace.

engineering, electrical & electronic,computer science, information systems,physics, applied
Neutron-induced effects on a self-refresh DRAM

Lucas Matana Luza,Daniel Söderström,Helmut Puchner,Rubén García Alía,Manon Letiche,Carlo Cazzaniga,Alberto Bosio,Luigi Dilillo

DOI: https://doi.org/10.1016/j.microrel.2021.114406

IF: 1.6

2022-01-01

Microelectronics Reliability

Abstract:The field of radiation effects in electronics research includes unknowns for every new device, node size, and technical development. In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under neutron irradiation. The neutron-induced effects were investigated and characterised by event cross sections, soft-error rate, and bitmaps evaluations, leading to an identification of permanent and temporary stuck cells, single-bit upsets, and block errors. Block errors were identified in different patterns with dependency in the addressing order, leading to up to two thousand faulty words per event, representing a real threat from a user perspective, especially in critical applications. An analysis of the damaged cells' retention time was performed, showing a difference in the efficiency of the self-refresh mechanism and a read operation. Also, a correlation of the fault mechanism that generates both single-bit upsets and stuck bits is proposed. Post-irradiation high-temperature annealing procedures were applied, showing a recovery behaviour on the damaged cells.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Study for NOR Flash Cell Burn out Failure Improvement in the Advanced Node below 65Nm

Peng Sun,Yun Li,Yao,Peng-Fei Wang

DOI: https://doi.org/10.1109/asicon47005.2019.8983488

2019-01-01

Abstract:Flash cell endurance performance is one of the most important index for flash technology, it becomes more and more challenge during the NOR flash cell scaling down. In this paper, it was reported the mechanism analysis and improvement method for NOR Flash cell endurance burn out in the advanced node beyond 65nm. Tunnel oxide, inter poly dielectric(IPD) film, dielectric film between control gate(CG) to active area(AA) have been analyzed through various experiments to explain the mechanism for NOR Flash cell endurance burn out. To be noticed, we found that CG to AA interface defect reduction and optimized chip probing (CP) screen methodology could be extremely good to enhance NOR Flash cell endurance performance.
State-of-the-Art Flash Chips for Dosimetry Applications

Preeti Kumari,Levi Davies,Narayana P. Bhat,En Xia Zhang,Michael W. McCurdy,Daniel M. Fleetwood,Biswajit Ray

DOI: https://doi.org/10.48550/arXiv.1809.08520

2018-09-23

Abstract:In this paper we show that state-of-the-art commercial off-the-shelf Flash memory chip technology (20 nm technology node with multi-level cells) is quite sensitive to ionizing radiation. We find that the fail-bit count in these Flash chips starts to increase monotonically with gamma or X-ray dose at 100 rad(SiO2). Significantly more fail bits are observed in X-ray irradiated devices, most likely due to dose enhancement effects due to high-Z back-end-of-line materials. These results show promise for dosimetry application.

Instrumentation and Detectors
TID Characterization of 0.13&#x00b5;m SONOS Cell in 4mb NOR Flash Memory

Fengying Qiao,Yu Xiao,Liyang Pan,Hui Ma,Dong Wu,Jun Xu

DOI: https://doi.org/10.1109/ipfa.2012.6306287

2012-01-01

Abstract:In this paper, we investigate the TID response of 0.13μm SONOS cell with different charge states up to 2 Mrad(Si) and propose an improved model. Additionally, radiation experiment results show that I RD increase is the main reason for read error in the fabricated 4Mb flash memory chip.
Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

Hongyu Ren,Fanyu Liu,Bo Li,Junyan Zhu,Siyuan Chen,Linfei Wang,Shanshan Ma,Gang Zhang,Jiangjiang Li,Pengyu Cui,Jiantou Gao,Dinghan Ye,Haibin Wang,Jing Wan,Zhengsheng Han,Tianchun Ye

DOI: https://doi.org/10.1109/tns.2024.3371454

IF: 1.703

2024-01-01

IEEE Transactions on Nuclear Science

Abstract:The total ionizing mymargin dose mymargin (TID) effect is systematically investigated in the double silicon-on-insulator (DSOI) static random access memory (SRAM) circuits, taking into consideration: silicon film thicknesses, floating/unfloating body, and back-gate bias. It is experimentally demonstrated that the SRAM circuits with thinner silicon layer (45 nm) and floating-body transistors exhibit better radiation tolerance, with a corresponding decrease in read current by 3.8% and an increase in access time by 34.7%. This can be attributed to enhanced back-gate tuning ability, which increased from 2.17% to 8.62% for nMOS and from 8.6% to 34.7% for pMOS. A back-gate bias of -3 V is sufficient to compensate for the degradation with total dose accumulated up to 1 Mrad(Si). Technology computer-aided design (TCAD) simulations indicate that the electric field gradually saturates near the first buried oxide (BOX) for a thicker silicon layer, weakening the modulation ability of back-gate bias. Compared with floating devices, the tuning range is reduced for devices with body-tie (unfloating body), and higher back-gate voltages can significantly strengthen the electric field in the channel, around three times. This results in a substantial increase in the channel current, implying that the back-gate bias cannot be increased unrestrictedly.

The Impacts of Total Ionizing Dose Irradiation on NOR Flash Memory

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

Investigation of Total Ionizing Dose (TID)Effect on High-Voltage Circuits in Flash Memory

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Investigation Of Tid Degradation Of High Voltage Circuits In Flash Memory

Investigation of impact of floating gate implantation annealing on the characteristics of 4Xnm ETOX NOR-flash memory

The accelerated TID degradation induced by neutron irradiation on CMOS microprocessor

Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Primary Total Ionizing Dose Effect Studies on Xilinx SoC Irradiated with 60co Γ Rays

Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

Neutron-induced effects on a self-refresh DRAM

Study for NOR Flash Cell Burn out Failure Improvement in the Advanced Node below 65Nm

State-of-the-Art Flash Chips for Dosimetry Applications

TID Characterization of 0.13&amp;#x00b5;m SONOS Cell in 4mb NOR Flash Memory

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

TID Characterization of 0.13µm SONOS Cell in 4mb NOR Flash Memory