The Age of Mammals: How It All Began

J. Archibald

DOI: https://doi.org/10.1007/s10914-009-9106-1

2009-01-30

Journal of Mammalian Evolution

Abstract:

What problem does this paper attempt to address?

Neutron Irradiation Effect on Permeability and Magnetoimpedance of Amorphous and Nanocrystalline Magnetic Materials

MH Phan,HX Peng,MR Wisnom,SC Yu,CG Kim,M Vazquez

DOI: https://doi.org/10.1103/physrevb.71.134423

IF: 3.7

2005-01-01

Physical Review B

Abstract:In this paper we provide physical insights into the effect of neutron irradiation on permeability spectra and magnetoimpedance of amorphous and nanocrystalline alloys. Experimental results indicate that neutron irradiation increases the permeability of the amorphous alloy but decreases the permeability of the nanocrystalline alloy in a high frequency region sf u1 MHzd, while the opposite is found in a low frequency region sf ,1 MHzd. A careful examination of sample temperature during neutron irradiation process excludes thermal annealing as a possible origin of the observed irradiation effect. The magnetic relaxations in the low and high frequency regions are ascribed to the irreversible domain wall motion and reversible rotational magnetization, respectively. The enhancement in the permeability of the amorphous alloy upon neutron irradiation leads to a parallel improvement of magnetoimpedance response of the material, which is of practical use for sensing applications.
High-energy electron irradiation study of relaxor ferroelectric Pb(Mg 1/3 Nb 2/3 )O 3 and Pb 1− x La x [Mg (1+ x )/3 Nb (2− x )/3 ]O 3 by transmission electron microscopy

Shu Miao,Jing Zhu,X. W. Zhang,X. H. Chen

DOI: https://doi.org/10.1557/JMR.2002.0379

IF: 2.7

2002-01-01

Journal of Materials Research

Abstract:The electron irradiation sensitivities of Pb(Mg 1/3 Nb 2/3 )O 3 (PMN) and Pb 1− x La x [Mg (1+ x )/3 Nb (2− x )/3 ]O 3 (PLMN) ceramics were investigated by transmission electron microscopy. Nanoscale Pb particles formed in these materials under electron beam radiation. It was found that these fine Pb particles generally had a preferred crystallographic orientation relationship with the PMN/PLMN host and always existed at positions slightly rich in Mg 2+ . A preliminary mechanism involving defect chemistry reactions is proposed to interpret this unusual Pb precipitation. Possible limitations to the practical applications of these materials are discussed.
Dielectric properties of electron irradiated PbZrO3 thin films

Shetty Aparna,V. M. Jali,Ganesh Sanjeev,Jayanta Parui,S. B. Krupanidhi

DOI: https://doi.org/10.1007/s12034-010-0029-5

IF: 1.878

2010-06-01

Bulletin of Materials Science

Abstract:The present paper deals with the study of the effects of electron (8 MeV) irradiation on the dielectric and ferroelectric properties of PbZrO3 thin films grown by sol-gel technique. The films were (0.62 μm thick) subjected to electron irradiation using Microtron accelerator (delivered dose 80, 100, 120 kGy). The films were well crystallized prior to and after electron irradiation. However, local amorphization was observed after irradiation. There is an appreciable change in the dielectric constant after irradiation with different delivered doses. The dielectric loss showed significant frequency dispersion for both unirradiated and electron irradiated films. Tc was found to shift towards higher temperature with increasing delivered dose. The effect of radiation induced increase of ɛ′(T) is related to an internal bias field, which is caused by radiation induced charges trapped at grain boundaries. The double butterfly loop is retained even after electron irradiation to the different delivered doses. The broader hysteresis loop seems to be related to radiation induced charges causing an enhanced space charge polarization. Radiation-induced oxygen vacancies do not change the general shape of the AFE hysteresis loop but they increase Ps of the hysteresis at the electric field forced AFE to FE phase transition. We attribute the changes in the dielectric properties to the structural defects such as oxygen vacancies and radiation induced charges. The shift in TC, increase in dielectric constant, broader hysteresis loop, and increase in Pr can be related to radiation induced charges causing space charge polarization. Double butterfly and hysteresis loops were retained indicative of AFE nature of the films.

materials science, multidisciplinary
Effects of Γ-Ray Irradiation on Ferroelectric Properties of Pr and Mn Co-Substituted BiFeO3 Thin Films

Zheng Wen,Di Wu,Jiating Zhu,Aidong Li

DOI: https://doi.org/10.1088/0022-3727/47/4/045310

2014-01-01

Abstract:gamma-ray irradiation effects on ferroelectric properties of (Bi0.85Pr0.15)(Fe0.95Mn0.05)O-3 (BPFMO) thin films are investigated by pizeoresponse force microscopy and polarization-voltage hysteresis measurements. The irradiated BPFMO thin-film capacitors show reduced polarizations and imprinted hysteresis loops. The loss of nonvolatile polarization increases with the decrease of polarization values prior to the irradiation and the imprint of hysteresis loops depends on the direction of polarization. These are discussed in terms of separation of gamma-ray-excited electron-hole pairs by the depolarization field and subsequent charge trapping and aggregation on charged domain walls in BPFMO thin films.
Degradation of KNN-Based Lead-Free Piezoelectric Material under Gamma Irradiation

Gang Dai,Yijia Du,Quanfeng Zhou,Le Zhong,Xiangyu Sun,Ke Wang,Jian Zhang

DOI: https://doi.org/10.1109/tns.2018.2817494

IF: 1.703

2018-01-01

IEEE Transactions on Nuclear Science

Abstract:(Na0.5K0.5)NbO3-(Bi0.5Li0.5)TiO3-BaZrO3 lead-free piezoelectric ceramics are irradiated to 50 Mrad(Si) by Co-60 gamma rays. The degradation behaviors of piezoelectric and ferroelectric characteristics are investigated. Most characteristics degrade fast during the first 10-Mrad(Si) irradiation and then degrade slowly. The 30% degradation of material performance at about 15 Mrad(Si) has been observed, which is much worse than that of lead zirconate titanate [Pb(Zr52Ti48)O-3, PZT] ceramics. The (K, Na)NbO3-based ceramics have much more complex microstructures and interfaces than PZT ceramics, leading to the existence of much more defects and neutral traps. During irradiation, more ionized carriers are trapped. Stronger built-in electric field is established by inducing faster degradation of the material performance. The saturation of trapped charges at the domain wall might be the cause of the slowly degradation curve. Therefore, to successfully replace the lead-based piezoelectric material and improve the radiation tolerance in extreme radiation environment, the appropriate material compositions and corresponding fabrication process need to be considered.
Gamma ray irradiation effect on optical, dielectric, ferroelectric and ferroelectric fatigue properties of neodymium doped rubidium titanyl phosphate single crystal (Nd:RbTiOPO4)

Arulmani Marimuthu,Venkatraj Athikesavan,Sinitha B. Nair,G. Thilakavathi

DOI: https://doi.org/10.1007/s10854-024-13764-1

2024-11-04

Journal of Materials Science Materials in Electronics

Abstract:Neodymium doped rubidium titanyl phosphate single crystal was grown from the high-temperature flux technique. To investigate the material stability in the radiation background, for the first-time neodymium doped rubidium titanyl phosphate single crystal was subjected to gamma ray irradiation. After the irradiation of the 2.6-kGy gamma-radiation, the material's optical and electrical properties were analyzed and the results have been compared to that of non irradiated Nd: RTP single crystal. A small absorption band was found in the visible region around 0.08 higher than the non -irradiated Nd: RTP single crystal and there is a small variations in the band gap energy, 3.61 eV for non -irradiated Nd: RTP single crystal and 3.54 eV for gamma irradiated Nd: RTP single crystal. The dielectric constant, dielectric loss, and AC conductivity was observed for non-irradiated and gamma irradiated Nd: RTP single crystals. The Gamma radiation irradiated Nd: RTP single crystal shows little higher value of dielectric constant, loss and conductivity around 0.07, 0.05 and 1.2 S/cm from the non irradiated sample respectively. From the ferroelectric studies there is an increase in polarization and coercive field were observed in the gamma-ray irradiated sample from that of non-irradiated Nd: RTP single crystal. This can be attributed to radiation-induced defects is local strains and movements of ions inside the crystal. Besides the Gamma irradiated sample shows fatigue free nature over the 5000 cyclic period. The gamma-ray induced a defect in material but not far away from application requirements and the radiation effect had been removed through the thermal annealing process.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Gamma-induced stress, strain and p-type doping in MBE-grown thin film MoTe 2

Nahid Chaudhary,Kamlesh Bhatt,Taslim Khan,Rajendra Singh

DOI: https://doi.org/10.1039/d4cp02600d

IF: 3.3

2024-08-18

Physical Chemistry Chemical Physics

Abstract:A thorough examination of the stability of a 2D MoTe 2 thin film exposed to high-dose gamma radiation (γ) is addressed in this study. This study compares the film before and after irradiation (10–600 kGy dosage) to report the impact of γ radiation on the surface morphology, work function, tensile strain and charge redistribution in the MoTe 2 thin film. The radiation damage to the film is monitored by optical micrographs (OM) and with atomic force microscopy (AFM) and conceptualized by thermal strain in the film. Raman spectroscopy has been used to analyze the shifting and to address the strain that arises due to irradiation in its vibrational mode. Kelvin probe force microscopy (KPFM) has been performed to evaluate the work function of the film, which increases by 0.14 eV for the 600 kGy γ-irradiated sample, implying shifting of the Fermi-level to the valence band of the spectrum and thus it results in p-type doping in the film. Owing to the reduced atomic mass and high energy of tellurium atoms, γ-irradiation causes tellurium vacancies, which lead to the formation of dangling bonds at unoccupied sites. When oxygen is adsorbed at these reactive spots, a charge-transfer mechanism takes place. This mechanism involves the transfer of electrons from the thin MoTe 2 film to the adsorbed oxygen, forming oxides and causing p-type doping. Furthermore, p-doping is verified by the valence band shifting by 1.27 eV in 600 kGy in γ-irradiated samples in X-ray photoelectron spectroscopy. This comprehensive study shows how γ irradiation affects the chemical and physical characteristics of the MoTe 2 thin film. Consequently, it shows that if devices integrating MoTe 2 thin films are meant to be used in high-dose radiation conditions, the adsorbate concentrations, radiation shielding and required lifetimes must be carefully evaluated.

chemistry, physical,physics, atomic, molecular & chemical
Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

W. Chen,R. Fang,H. J. Barnaby,M. B. Balaban,Y. Gonzalez-Velo,J. L. Taggart,A. Mahmud,K. Holbert,A. H. Edwards,M. N. Kozicki

DOI: https://doi.org/10.1109/tns.2016.2618359

IF: 1.703

2017-01-01

IEEE Transactions on Nuclear Science

Abstract:In this paper, the operation and effects of radiation on Programmable Metallization Cells (PMC) memory and selector devices are analyzed and discussed. The Ag- or Cu-Ge30Se70 devices demonstrate non-volatile memory switching characteristics while the Ag- or Cu-SiO2 devices show a volatile threshold switching property. The impact of total ionizing dose from gamma-ray irradiation on both device types is investigated experimentally. It is found that the virgin and high-resistance state of Ge30Se70 memory devices degrade after gamma-ray exposure while they are well preserved in SiO2 selector devices.
Radiation effects on mechanical characteristics of MEMS

Lifeng Wang,Qingan Huang,Jieying Tang,J. K. Luo

DOI: https://doi.org/10.1109/IPFA.2009.5232728

2009-01-01

Abstract:This paper reports radiation effects on mechanical characteristics of MEMS fixed-fixed beams and cantilevers after Co60 radiation. Radiation test is performed and resonant frequencies are measured by LDV. And stress relaxation has been recognized as main reason by theoretical analysis ©2009 IEEE.
Effect of Gamma Irradiation on the Structural, Optical, Electrical, and Ferroelectric Characterizations of Bismuth-Modified Barium Titanate Ceramics

Hanan Al-Ghamdi,Aljawhara H. Almuqrin,Hamoud Kassim,Aljawhara Almuqrin

DOI: https://doi.org/10.3390/ma15124337

IF: 3.4

2022-06-20

Materials

Abstract:Materials with ferroelectric properties, low bandgap energies, high polarization, low loss, and thermal stability are essential for future solar-cell applications. Researchers have attempted to obtain such materials by using several approaches. In this vein, a novel approach is reported in this work using gamma ray irradiation. The effect of gamma radiation on the structural, optical, and ferroelectric characterizations of bismuth (Bi)-doped barium titanate (BaTiO3 (BT)), namely Ba0.95Bi0.05TiO3 ceramics (abbreviated as (Bi:BT)), was investigated. X-ray diffraction, structure refinement, and Raman study revealed the presence of a perovskite structure with a tetragonal phase in all investigated samples. Morphological study revealed a nonuniform grain size and some porosity. Gamma irradiation-induced combined effects were proved by a detailed analysis of bond lengths, bond angles, octahedral distortions, oxygen vacancies, and charge compensations. Electron paramagnetic resonance (EPR) study gave direct evidence of oxygen vacancies in the irradiated samples. After gamma irradiation, UV–vis study indicated a decrease in the bandgap from 3.14 to 2.80 eV and a significant increase in visible light absorption. Cole–Cole plots confirm as an increase in gamma-ray dose results in higher levels of electron hopping. Study of the P–E hysteresis loop demonstrated that ferroelectric properties could be maintained after gamma irradiation, with a slight decrease in remnant polarization. The behaviour of the P–E was correlated with increasing gamma dose in the investigated ceramics, demonstrating a strong gamma dependence in the loops' profile. We guess that the present approach may be a promising technique for enhancing the multifunctionality of electronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Effect of gamma radiation on electrical properties of diffusive memristor devices

D.P. Pattnaik,C. Andrews,M. D. Cropper,A. Balanov,S. Saveliev,P. Borisov

2023-03-23

Abstract:Diffusive memristors continue to receive tremendous interest due to their ability to emulate biological neurons and thus aid the development of bio-inspired computation technology. A major issue with the diffusive memristor is the inability to reliably control the formation of the conduction filaments which affects both the device functionality and reproducibility of regimes after each application of voltage. Here we investigate the effect of gamma radiation on the electrical properties of the diffusive memristors based on metallic nanoparticles in dielectric matrix. Our experiments show that after exposing to radiation, the memristors demonstrate much sharper (and less noisy) hysteresis in the current-voltage characteristics while preserving the same low- and high-resistive states as in the pristine samples. Additionally, the radiation lowers both threshold and hold voltages that correspond to onset of low- and high- resistive states, respectively. The proposed mechanism involves radiation-induced defects in the silica matrix which help to establish dominant pathways for nanoparticles to form conduction filaments. Our findings suggest an efficient way to enhance working characteristics of diffusive memristors and to improve their reproducibility.

Applied Physics,Materials Science
Ferroelectric Characteristics of and Capacitors in a Radiation Environment

JX Gao,LR Zheng,XR Fu,CL Lin,RL Yan

DOI: https://doi.org/10.1088/0953-8984/10/33/018

1998-01-01

Journal of Physics Condensed Matter

Abstract:PbTiO3/YBa2Cu3O7-delta (PTO/YBCO) and PbZr0.52Ti0.48O3/YBa2Cu3O7-delta (PZT/ YBCO) structures were fabricated on SrTiO3 and LaAlO3 substrates by the pulsed excimer laser deposition (PLD) method, respectively. In order to investigate total dose radiation effects on the Au/PTO/YBCO and Au/PZT/YBCO fenoelectric (FE) capacitors, the capacitance-voltage (C-V) and the retained polarization properties of the capacitor were measured before and after gamma-ray irradiation. The results showed that, with the increment of the gamma dose, the retained polarization Delta P and the dielectric constant epsilon of the FE capacitors decreased; but the absolute value of the negative and positive coercive fields of the PZT capacitor increased while that of the PTO capacitor decreased. The results have been interpreted by radiation-induced positive charges and the defect trap model.
Effect of gamma radiation on the structural, ferromagnetic resonance, optical, and dispersion properties of PVC/MnFe2O4–ZnMn2O4 nanocomposite films

B. Alshahrani,A. H. Korna,S. Fares

DOI: https://doi.org/10.1007/s10853-024-10156-y

IF: 4.5

2024-09-09

Journal of Materials Science

Abstract:Gamma radiation's impact on PVC/MnFe 2 O 4 –ZnMn 2 O 4 nanocomposite films (fabricated via solution casting and irradiated at 0, 50, 100, and 150 kGy) was investigated. XRD revealed reduced defects and increased crystallite size with increasing dose (except 150 kGy, which induced a new phase). FTIR suggested gamma radiation breaks down PVC chains, generating free radicals that promote crosslinking with nanoparticles. The intensity of specific bands increased with dose (up to 100 kGy) before decreasing at 150 kGy, supporting the disruption of the crystalline structure at higher doses. Lower doses promoted a more ordered arrangement of PVC chains, while higher doses favored crosslinking, disrupting order. The optical bandgap ranged from 3.20 to 4.53 eV, with the oscillator energy increasing (up to 100 kGy) before decreasing (150 kGy). This study demonstrates that gamma radiation can be used to tailor the structural, morphological, and optical properties of these films, enabling the design of materials with specific.

materials science, multidisciplinary
Effect of gamma radiation on the optical and color properties of Makrolon/Pocan/ZnS-NiO nanocomposite films

Douaa El-Said Bakeer,Faten AlSomali,Rehab Yajzey,Kaoutar A. Benthami,Samir A. Nouh

DOI: https://doi.org/10.1080/10420150.2024.2318740

2024-04-26

Radiation Effects and Defects in Solids

Abstract:Makrolon/Pocan is a polymer blend of amorphous polycarbonate (PC) and semicrystalline polybutylene terephthalate (PBT). We fabricate a nanocomposite (NC) of PC/PBT polymer blend, Zinc sulfide (ZnS) and Nickel oxide (NiO) nanoparticles by the sol–gel and ex-situ casting processes. We trust that this study is novel in the area of the impact of γ radiation on this NC. The Rietveld modification of XRD records indicates that both the prepared ZnS and NiO have a nano-nature of an average particle size of 4 and 18 nm, respectively. Samples of the PC-PBT/ZnS-NiO NC films are irradiated with several γ doses (10 − 100 kGy). We investigate the resulting outcome of the γ irradiation on the linear and non linear optical behavior of the NC films, using ultraviolet spectroscopy (UVs) and the International Commission on Illumination (CIE) color changes technique. Upon increasing the γ dose up to 100 kGy, the maximum dose used, both direct and indirect bandgaps decreased. The Urbach energy exhibits a reverse trend. We attribute this to the dominance of chain crosslinks that damaged the ordered configuration and thus increased the amorphous phase. This suggests that the γ radiation can facilitate the spreading of the nanoparticles within the composite matrix suggesting an extra compacted structure of the NC samples. Also, we detect the nature of microelectronic transitions, using the optical dielectric loss (ε"), and found that the PC-PBT/ZnS-NiO NC films had direct allowed transitions. Moreover, we study the γ-induced modifications in the optical conductivity, dielectric parameters and nonlinear optical parameters. Further, the color changes between the pristine and irradiated films were estimated. The pristine NC film exhibited significant color differences upon γ irradiation. The induced improvements in the optical characters suggest that the γ is a suitable mean that permits the use of PC-PBT /ZnS-NiO NC in the optoelectronic devices.

physics, condensed matter, fluids & plasmas,nuclear science & technology
Total Dose Radiation Effects of Pt/Pzt/Pt Ferroelectric Capacitors Fabricated by Pld Method

JX Gao,LR Zheng,BP Huang,ZT Song,LX Yang,YJ Fan,DZ Zhu,CL Lin

DOI: https://doi.org/10.1088/0268-1242/14/9/315

IF: 2.048

1999-01-01

Semiconductor Science and Technology

Abstract:In order to study total dose radiation effects of PbZrxTi1-xO3 (PZT) film made with the pulsed excimer laser deposition (PLD) technique, hysteresis loops and capacitance-voltage (C-V) curves of PZT film capacitors have been measured before and after gamma-ray irradiation. The results show that, in a range of 0-2 x 10(5) Gy (Si), with increasing total dose, the remanent polarization 2P(r) increased while dielectric constant epsilon decreased. This can be explained by charges trapped by some defects during irradiation.
Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

David D. Lynes,Joshua Young,Eric Lang,Hengky Chandrahalim

DOI: https://doi.org/10.1002/admi.202300240

IF: 5.4

2023-08-31

Advanced Materials Interfaces

Abstract:Schematic of aluminum nitride transduced bulk acoustic wave microelectromechanical resonators: The top illustration presents a resonator without an oxide thin film, while the bottom illustration exhibits a resonator incorporating an oxide layer. These devices are subjected to irradiation by silicon ions (2 MeV Si+ ions), produced and directed toward the target by the High Voltage Engineering Tandem Accelerator system. Microelectromechanical systems (MEMS) resonators use is widespread, from electronic filters and oscillators to physical sensors such as accelerometers and gyroscopes. These devices' ubiquity, small size, and low power consumption make them ideal for use in systems such as CubeSats, micro aerial vehicles, autonomous underwater vehicles, and micro‐robots operating in radiation environments. Radiation's interaction with materials manifests as atomic displacement and ionization, resulting in mechanical and electronic property changes, photocurrents, and charge buildup. This study examines silicon (Si) ion irradiation's interaction with piezoelectrically transduced MEMS resonators. Furthermore, the effect of adding a dielectric silicon oxide (SiO2) thin film is unveiled. Aluminum nitride on silicon (AlN‐on‐Si) and AlN‐SiO2‐Si bulk acoustic wave (BAW) resonators are designed and fabricated. The devices are irradiated using 2 MeV Si+ ions at various fluxes up to a total fluence of 5 × 1014 cm−2. A time anneal is conducted to characterize device recovery. Scattering (S‐) parameters are measured in situ. Specific damage coefficients are derived to describe the radiation effect on resonant frequency (fr), quality factor (Q), motional resistance (Rm), and electromechanical coupling factor (keff2 ). Furthermore, the damage coefficients for the bulk material properties of elastic modulus (E) and the piezoelectric coefficient (d31) are found.

materials science, multidisciplinary,chemistry
A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells

W. Chen,H. J. Barnaby,M. N. Kozicki,A. H. Edwards,Y. Gonzalez-Velo,R. Fang,K. E. Holbert,S. Yu,W. Yu

DOI: https://doi.org/10.1109/tns.2015.2478883

IF: 1.703

2015-01-01

IEEE Transactions on Nuclear Science

Abstract:The Cu-SiO2 based programmable metallization cell (PMC) is a promising alternative to the Ag-chalcogenide glass PMC because of its low power consumption and CMOS-compatibility. Understanding its total ionizing dose (TID) response helps in assessing the reliability of this technology in ionizing radiation environments and benefits its expansion in the space electronics market. In this paper, the impacts of TID on the switching characteristics of Cu-SiO2 PMC are investigated for the first time. The devices were step irradiated with 60Co gamma-rays to a maximum dose of 7.1 Mrad ( SiO2). The results show that gamma-ray irradiation has a negligible impact on the virgin-state and on-state resistance of Cu-SiO2 PMCs. The off-state resistance slightly decreases after the first 1.5 Mrad( SiO2) of exposure, but this reduction saturates after higher levels of TID. Other switching characteristics such as the set voltage, multilevel switching capability and endurance were also studied, all of which did not show observable changes after gamma-ray radiation. The immunity to ionizing radiation is attributed to the suppression of the photo-doping process.
Effects of Electron Irradiation and Temperature on Mechanical Properties of Polyimide Film

Jian Qiu,Jusha Ma,Wenjia Han,Xiao Wang,Xunchun Wang,Maliya Heini,Bingyang Li,Dongyang Sun,Ruifeng Zhang,Yan Shi,Cunfa Gao

DOI: https://doi.org/10.3390/polym15183805

IF: 5

2023-09-19

Polymers

Abstract:Polyimide (PI) is widely deployed in space missions due to its good radiation resistance and durability. The influences from radiation and harsh temperatures should be carefully evaluated during the long-term service life. In the current work, the coupled thermal and radiation effects on the mechanical properties of PI samples were quantitatively investigated via experiments. At first, various PI specimens were prepared, and electron irradiation tests were conducted with different fluences. Then, both uniaxial tensile tests at room temperature and the dynamic mechanical analysis at varied temperatures of PI specimens with and without electron irradiation were performed. After that, uniaxial tensile tests at low and high temperatures were performed. The fracture surface of the PI film was observed using a scanning electron microscope, and its surface topography was measured using atomic force microscopy. In the meantime, the Fourier-transform infrared spectrum tests were conducted to check for chemical changes. In conclusion, the tensile tests showed that electron irradiation has a negligible effect during the linear stretching period but significantly impacts the hardening stage and elongation at break. Moreover, electron irradiation slightly influences the thermal properties of PI according to the differential scanning calorimetry results. However, both high and low temperatures dramatically affect the elastic modulus and elongation at break of PI.

polymer science
Gamma Radiation Effect of Polymethylvinylphenylsiloxane Rubbers under Different Temperatures

Ke Cao,Yinyong Ao,Jian Chen,Jing Peng,Wei Huang,Jiuqiang Li,Maolin Zhai

DOI: https://doi.org/10.1002/app.45404

IF: 3

2017-01-01

Journal of Applied Polymer Science

Abstract:ABSTRACTThe gamma radiation effect on polymethylvinylphenylsiloxane (PMVPS) rubbers is investigated by irradiation exposure of PMVPS rubbers to a maximum dose of 200 kGy in the temperature range 28–110 °C. Compared with unirradiated PMVPS rubber, the elongation at break of irradiated PMVPS rubber decreases while its elastic modulus increases with the increase of absorbed dose or radiation temperature. DSC, ATR‐FTIR, XPS, and 1H‐NMR indicate that slight degradation and oxidation reaction occur during the irradiation of PMVPS. Solvent swelling and gel fraction study confirms that the crosslinking density of PMVPS rubbers increases gradually with increasing absorbed dose or radiation temperature. Therefore, radiation‐induced crosslinking of PMVPS is dominant reactions for the chosen dose or temperature range. Furthermore, synergistic effect exists in the high‐temperature radiation process for PMVPS rubbers. © 2017 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2017, 134, 45404.
Robust Stability of Optical and Electronic Properties of Gallium‐Doped Zinc Oxide Thin Films to Gamma Ray Irradiation

Claudia Barone,Jeetendra Gupta,Rodica M. Martin,Ihor Sydoryk,Valentin Craciun,Junichi Nomoto,Hisao Makino,Tetsuya Yamamoto,Catalin Martin

DOI: https://doi.org/10.1002/pssb.202100469

2021-12-10

physica status solidi (b)

Abstract:Through combined measurements of broadband optical spectroscopy (10 meV to 6 eV), electrical resistivity, and Hall effect, the effects of gamma ray irradiation on electronic and optical properties of gallium‐doped ZnO (GZO) thin films, deposited by ion plating direct‐current arc discharge, are investigated. A significant number of films, deposited at various discharge currents (I D = 100–200 A) and oxygen gas flow rates (OFR = 0–25 sccm), exposed to doses of 15 and 30 kGy of gamma rays, are studied. The results indicate strong resilience of films to irradiation: visible range transparency is reduced by 10–12% and the optical bandgap shifts to lower energies by less than 3%, while electrical resistivity, carrier concentration, and electron mobility remain nearly unchanged.

physics, condensed matter

The Age of Mammals: How It All Began

Neutron Irradiation Effect on Permeability and Magnetoimpedance of Amorphous and Nanocrystalline Magnetic Materials

High-energy electron irradiation study of relaxor ferroelectric Pb(Mg 1/3 Nb 2/3 )O 3 and Pb 1− x La x [Mg (1+ x )/3 Nb (2− x )/3 ]O 3 by transmission electron microscopy

Dielectric properties of electron irradiated PbZrO3 thin films

Effects of Γ-Ray Irradiation on Ferroelectric Properties of Pr and Mn Co-Substituted BiFeO3 Thin Films

Degradation of KNN-Based Lead-Free Piezoelectric Material under Gamma Irradiation

Gamma ray irradiation effect on optical, dielectric, ferroelectric and ferroelectric fatigue properties of neodymium doped rubidium titanyl phosphate single crystal (Nd:RbTiOPO4)

Gamma-induced stress, strain and p-type doping in MBE-grown thin film MoTe 2

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Radiation effects on mechanical characteristics of MEMS

Effect of Gamma Irradiation on the Structural, Optical, Electrical, and Ferroelectric Characterizations of Bismuth-Modified Barium Titanate Ceramics

Effect of gamma radiation on electrical properties of diffusive memristor devices

Ferroelectric Characteristics of and Capacitors in a Radiation Environment

Effect of gamma radiation on the structural, ferromagnetic resonance, optical, and dispersion properties of PVC/MnFe2O4–ZnMn2O4 nanocomposite films

Effect of gamma radiation on the optical and color properties of Makrolon/Pocan/ZnS-NiO nanocomposite films

Total Dose Radiation Effects of Pt/Pzt/Pt Ferroelectric Capacitors Fabricated by Pld Method

Impact of Silicon Ion Irradiation on Aluminum Nitride‐Transduced Microelectromechanical Resonators

A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells

Effects of Electron Irradiation and Temperature on Mechanical Properties of Polyimide Film

Gamma Radiation Effect of Polymethylvinylphenylsiloxane Rubbers under Different Temperatures

Robust Stability of Optical and Electronic Properties of Gallium‐Doped Zinc Oxide Thin Films to Gamma Ray Irradiation