A Novel SEU-Hardened D Flip-Flop

SHEN Ming-jie,DAI Zhong-dong,YU Jun

DOI: https://doi.org/10.3969/j.issn.0427-7104.2006.04.011

2006-01-01

Abstract:Two typical master-slave type D flip-flop of strong hardness to Single Event Upset(SEU) for radiation environment are introduced.Based on them,a novel D flip-flop of better hardness to dynamic SEU and less area is proposed.

What problem does this paper attempt to address?

Implementation of Radiation Hardened Flip-Flops Based on Novel Fishbone Layouts

Chang Cai,Zehao Wu,Jing Zhang,Luchang Ding,Lei Shen,Jun Yu,Yaqing Chi

DOI: https://doi.org/10.1109/ISCAS48785.2022.9937346

2022-01-01

Abstract:The conventional D-type flip-flop (DFF) is sensitive to the particle induced Single Event Upsets (SEUs). Thus, the radiation tolerance improvements for flip-flops by using novel layouts have attracted considerable interests in space application. In this paper, the SEU hardened fishbone layouts are proposed and employed to the delay module and slave latch cells in our test chip, and the width of radiation induced transient pulses is analyzed by our detailed characterizations. The actual radiation sensitivities of the new layouts are also evaluated by our systematic heavy ion experiments. Without additional consumption of transistors for the basic Double Interlocked Storage Cell (DICE), the obvious enhancements of SEU tolerance for the fishbone layouts are verified under static tests, though the initial clock signal has significant influence on SEU cross sections. The consistent SEU mitigation results of the employed fishbone layout for both the delay module and flip-flop cell indicate that the novel structure may be suitable for harsh radiation environment.
Experimental Investigation into Radiation-Hardening-by-design (RHBD) Flip-Flop Designs in a 65nm CMOS Process

Tong Lin,Kwen-Siong Chong,Wei Shu,Ne Kyaw Zwa Lwin,Jize Jiang,Joseph S. Chang

DOI: https://doi.org/10.1109/iscas.2016.7527403

2016-01-01

Abstract:We comprehensively study three types of radiation-hardened flip-flops: DICE for SEU-hardening, temporal for SET-hardening, and Triple-Modular-Redundancy for SEU-cum-SET-hardening. Our study includes their trade-offs of circuit/radiation-hardness attributes. We find that DICE flip-flops remain the most competitive.
Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-Nm UTBB FD-SOI Technology

Chang Cai,Tianqi Liu,Peixiong Zhao,Xue Fan,Hongyang Huang,Dongqing Li,Lingyun Ke,Ze He,LieWei Xu,Gengsheng Chen,Jie Liu

DOI: https://doi.org/10.1109/tns.2019.2956171

IF: 1.703

2020-01-01

IEEE Transactions on Nuclear Science

Abstract:The standard and layout-hardened D filp-flops (DFFs) named DFF1-6 were designed and manufactured based on an advanced 22-nm ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) technology. Heavy-ion irradiation results indicate that FD-SOI technology has contributions to radiation hardness and the hardened DFFs have higher single-event upset (SEU) tolerance than the standard DFF. The upsets induced by the embedded SET targets are strongly dependent on the testing frequency. The layout separating the dual interlocked storage cell (DICE) structure can prevent the direct occurrence of SEU in flip-flop cells, and upsets were removed completely in two-fold DICE structure DFFs.
Radiation-hardened Flip-Flop for Single Event Upset Tolerance

Chunhua Qi,Guoliang Ma,Yanqing Zhang,Tianqi Wang,Erming Rui,Qiang Jiao,Chaoming Liu,Mingxue Huo,Guofu Zhai

DOI: https://doi.org/10.1108/mi-06-2022-0110

IF: 0.942

2023-01-01

Microelectronics International

Abstract:Purpose The purpose of this paper is to present a transition detector (TD)-based radiation hardened flip-flop (TDRH-FF) for single event upset (SEU). Design/methodology/approach With SEU recovery and single event transient (SET) detector mechanism, the TDRH-FF can tolerate SEU during hold mode and generate a warning signal for architecture-level recovery during transport mode when input signal contains SET. Evaluation results show that the TDRH-FF outperforms comparable comprehensive performance. Findings Simulation results show that 1) the mean pulse width of the correction glitches (at full width half maximum) of TDRH-FF is less than 10 ps; 2) the area overhead of TDRH-FF is similar to the EVFERST-FF, BISER-FF and DNURHL-FF; 3) TDRH-FF has the same average power consumption as SETTOF, and moderate PDP and Ps values among these compared FFs. Originality/value In this paper, a TD-based TDRH-FF is proposed to solve the problems in the previous design. And the main contributions of the proposed TDRH-FF are summarized: Minimum size transistors are used in the proposed TD which leads to a considerable decrease in area overheads and propagation delay (resulting in an ignorable correction glitch); and compared with other radiation hardened flip-flop, TDRH-FF outperforms comparable comprehensive performance.
A Soft Error Detection and Recovery Flip-Flop for Aggressive Designs with High-Performance

Jie Li,Liyi Xiao,Hongchen Li,Xuebing Cao,Chenxu Wang

DOI: https://doi.org/10.1109/tdmr.2022.3161447

IF: 1.886

2022-01-01

IEEE Transactions on Device and Materials Reliability

Abstract:Soft errors induced by Single Event Transient (SET) or Single Event Upset (SEU) are a great threat to integrated circuits. To reduce the error rate and improve the reliability of the circuits, we proposed a radiation hardened flip-flop in this paper, namely, Soft Error Detection and Recovery flip-flop (SEDR-FF). Error detection is based on delayed sampling and redundant storage by a redundant latch. A pulsed clock is adopted to control the redundant latch to reduce the hold time constraint of the latch. To generate the pulsed clock, two efficient delay elements are presented in this paper. Error recovery is accomplished by reloading the previous data stored in a history latch. Transistor-level simulations and timing-annotated gate-level simulations under 65 nm technology show that the proposed flip-flop can efficiently detect and correct the soft errors caused by SET or SEU. It has low overhead of setup time, and is suitable for high-performance designs. In addition, compared with other radiation hardened cells, the proposed flip-flop has moderate power and area overhead, and has lower area cost for fixing hold time violations in circuits designs.
A 2ghz Programmable Counter with New Re-Loadable D Flip-Flop

MA Do,XP Yu,JG Ma,KS Yeo,R Wu,QX Zhang

DOI: https://doi.org/10.1109/edssc.2003.1283529

2003-01-01

Abstract:A high-speed programmable counter with a new re-loadable D Flip-flop which integrates the programmable function to a single true-single-phase-clock (TSPC) D flip-flop is presented. The proposed re-loadable D flip-flop is able to operate at higher frequencies with lower power consumption in comparison to the performance of the existing bitcell. A programmable divide-by-N counter implemented with this re-loadable D flip-flop using the Chartered 0.18mum CMOS process is capable of operating up to 2GHz for a 1.8V supply voltage with 4.7mW power consumption.
A Novel Self-Recoverable and Triple Nodes Upset Resilience DICE Latch

Dianpeng Lin,Yiran Xu,Xiaoyun Li,Xin Xie,Jianwei Jiang,Jiangchuan Ren,Huilong Zhu,Zhengxuan Zhang,Shichang Zou

DOI: https://doi.org/10.1587/elex.15.20180753

2018-01-01

IEICE Electronics Express

Abstract:With the CMOS technology scaling down, the normal latch is more susceptible to soft errors caused by radiation particles. In this paper, we proposed a low-power and highly reliable radiation hardened latch to enhance the single event upset (SEU) tolerance. Based on DICE latch and Muller C-element circuit, the proposed latch can provide 100% fault tolerance, which can be used for space applications in severe ray radiation environments. The simulation show that’s it not only can completely tolerate an SEU on any one of its internal single node, but it also can provide doublenode and triple-node upsets protection for facultative initial state of the latch. What’s more, compared with other hardened latches, the proposed cell has comparable or better performance in the matter of delay time and power.
A Power-Delay-product Efficient and SEU-tolerant Latch Design

Pei Liu,Tian Zhao,Feng Liang,Jizhong Zhao,Peilin Jiang

DOI: https://doi.org/10.1587/elex.14.20170972

2017-01-01

IEICE Electronics Express

Abstract:With the increasing high requirements for digital circuits in space application, devices with smaller feature size are put into use, which have more potential suffering from Single Event Upset (SEU) under certain radiation environment. In this paper, we propose a SEU-tolerant latch with low power-delay-product (PDP) that combines a SEU-tolerant cross-coupled structure with isolation operation of flipped state. Negative feedback paths are introduced to help recover the flipped state and can be cut off to speed up the write operation at transparent mode. Furthermore, isolation of flipped state is utilized to achieve better SEU-tolerance. The simulation results with 180 nm and 40 nm CMOS technology show that the proposed latch can achieve outstanding SEU-tolerance (Qcritical > 10 fC) and a relatively low PDP of 0.0095 fs×J for 40 nm CMOS technology.
TRIGON: A Single-phase-clocking Low Power Hardened Flip-Flop with Tolerance to Double-Node-Upset for Harsh Environments Applications

Yan Li,Jun Han,Xiaoyang Zeng,Mehdi B. Tahoori

DOI: https://doi.org/10.23919/DATE51398.2021.9474176

2021-01-01

Abstract:Single Event Upset (SEU) is one of the most susceptible reliability issues for CMOS circuits in a harsh environment, such as space or even a sea-level environment. Especially in the advanced nanoscale node, the phenomenon of Multi-node-upset (MNU) becomes more prominent. Although a lot of work has been proposed to solve this problem, most of them ignored the need for low power consumption. Particularly, most existing solutions are not effective anymore when operating in low supply voltage. Therefore, this paper proposes a novel Flip-Flop called TRIGON based on a single-phase-clocking structure to achieve low power consumption while being able to tolerate Double-node-upset (DNU), even when operating at lower supply voltages. The experimental results show that TRIGON has a significant reduction in the area and Power-delay-area-product (PDAP). Particularly, it achieves about 80% energy saving on average when the input is static compared with the state-of-the-art circuits.
A Low-Cost Error-Tolerant Flip-Flop Against SET and SEU for Dependable Designs

Jie Li,Liyi Xiao,Linzhe Li,Hongchen Li,He Liu,Chenxu Wang

DOI: https://doi.org/10.1109/tcsi.2022.3168082

2022-01-01

Abstract:Computing systems working in harsh environment is prone to suffer from radiation-induced soft errors; for example, Single Event Upsets (SEUs) and Single Event Transients (SETs) are the major reliability issue for circuits fabricated with nanoscale technology nodes. In this paper, we proposed a low-cost SET and SEU error tolerant flip-flop (SETU-TOFF). Based on the traditional flip-flop, two high-level sensitive redundant latches are added to latch the input data at different times, and a voter is designed for the correct output. It removes the timing overhead of temporal redundancy from the critical path of the systems. Comparing with the existing designs presented in literatures, SETU-TOFF has comprehensive fault tolerant capability with lower overheads; moreover, it doesn’t increase significant latency of the flip-flops. We use the SETU-TOFF cells to protect a pipeline of an OpenRISC microprocessor. Fault injection simulations show that SETU-TOFF can achieve 100% protection for the pipeline with negligible performance loss; additionally, it can detect and correct errors in real time without extra system control logic and clocks for errors recovery.
A Novel Highly Reliable and Low-Power Radiation Hardened SRAM Bit-Cell Design

Dianpeng Lin,Yiran Xu,Xiaonian Liu,Wenyi Zhu,Lihua Dai,Mengying Zhang,Xiaoyun Li,Xin Xie,Jianwei Jiang,Huilong Zhu,Zhengxuan Zhang,Shichang Zou

DOI: https://doi.org/10.1587/elex.15.20171129

2018-01-01

IEICE Electronics Express

Abstract:In this paper, an improved SEU hardened SRAM bit-cell, based on the SEU physics mechanism and reasonable circuit-design, is proposed. The simulation results show that the SRAM cell can provide full immunity for single node upset and multiple-node upset. Besides, it is suitable for low-power application.
A New Family of Sequential Elements with Built-in Soft Error Tolerance for Dual-VDD Systems

Saihua Lin,Huazhong Yang,Rong Luo

DOI: https://doi.org/10.1109/tvlsi.2008.2000520

2008-01-01

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Abstract:In this paper, we propose some soft-error-tolerant latches and flip-flops that can be used in dual-VDD systems. By utilizing local redundancy and inner feedback techniques, the latches and flip-flops can recover from soft errors caused by cosmic rays and particle strikes. The proposed flip-flop can be used as a level shifter without the problems of static leakage and redundant switching activity. Implemented in a standard 0.18-mu m technology, the proposed latches and flip-flops show superior performance compared to conventional ones in terms of delay and power while keeping the soft-error-tolerant characteristic. Experimental results show that compared to the traditional built-in soft-error-tolerant D latch, the D-QN delay of the new D latch is 29.1% less than that of the traditional built-in soft-error-tolerant D latch while consuming 16.5% less power as well. The D-Q delay and power of the new flip-flop are about 47.7% and 54% less than those of the traditional high speed level-converting flip-flop, respectively. In addition, the proposed flip-flop is more robust to soft errors. The critical charge which represents the minimum charge at the D input required to cause an error of the flip-flop can be increased by more than 46.4%. The time window during which the flip-flop will be erroneous caused by single-event upsets at the D input is reduced by more than 22.2%.
Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications

R. M. Chen,N. N. Mahatme,Z. J. Diggins,L. Wang,E. X. Zhang,Y. P. Chen,Y. N. Liu,B. Narasimham,A. F. Witulski,B. L. Bhuva,D. M. Fleetwood

DOI: https://doi.org/10.1109/tns.2018.2823385

IF: 1.703

2018-01-01

IEEE Transactions on Nuclear Science

Abstract:Analysis of temporal masking effects of single-event upsets (SEUs) on master–slave flip-flops (FFs) is provided, considering the difference of SEU cross sections between master and slave latches. An improved model of temporal masking effects of SEUs in master–slave FFs is proposed and demonstrated through alpha-particle single-event effect (SEE) experiments. Based on the improved model, an effective and accurate methodology to quantitatively evaluate single-event transient and SEU-induced error cross sections of FF chains is proposed. Implications of SEE hardening for sequential circuits are discussed.
Dynamic Current Mode Logic Based Flip-Flop Design for Robust and Low-Power Security Integrated Circuits

Jizhong Shen,Liang Geng,Fan Zhang

DOI: https://doi.org/10.1049/el.2017.2415

2017-01-01

Electronics Letters

Abstract:Side-channel analysis (SCA) is a powerful technique to reveal the secrets using detectable physical leakages from logic elements, which brings severe security threats to modern circuits. To alleviate this problem, applying cell-level countermeasure is usually a suitable solution, which is mainly implemented as dual-rail precharge logic. Mace et al. has the proposed dynamic current mode logic (DyCML) scheme as a novel technology to resist SCA, whose power consumption is constant regardless of the data processed. However, the DyCML-based sequential elements are still in blank field. So, we have implemented a novel flip-flop compatible with DyCML, whose enhanced security has been proved by corresponding simulations.
Design of Single-Event Tolerant Latches in 65nm CMOS Technology for Enhanced Scan Delay Testing

Qi Chunhua,Xiao Liyi,Wang Tianqi,Wang Mingjiang

DOI: https://doi.org/10.1109/PHM.2017.8079149

2017-01-01

Abstract:Nowadays, single event upsets (SEU) and the occurrence of delay faults caused by manufacturing defects are significant problems in high density VLSIs. Thus, researchers have drawn great attention on SEU tolerant design and delay fault testing. In this paper, two novel slave latches and a master latch have been proposed to improve the SEU tolerance of a flipflop in scan delay testing. The main purpose of this design is to solve the problems appearing in previous state-of-the-art latches. Simulation results show that, the two proposed slave latches can tolerate particles with charges of more than 1 pC. Furthermore, areas, CK-Q delay and power consumption are also investigated and made comparisons with recent state-of-the-art latches.
Design of Novel, Semi-Transparent Flip-Flops (STFF) for High Speed and Low Power Application

XiaYu Li,Song Jia,LiMin Liu,Yuan Wang,GangGang Zhang

DOI: https://doi.org/10.1007/s11432-012-4621-8

2012-01-01

Science China Information Sciences

Abstract:This paper presents a novel, semi-transparent structure to implement single-edge and dual-edge triggered flip-flops. These two novel flip-flops can achieve high speed and low power due to their short data paths and fewer redundant transitions. Simulation results show that the proposed semi-transparent flip-flop and dual-edge triggered semi-transparent flip-flop perform best compared with conventional flip-flops. STFF reduces the power-delay-product 33.1% compared with Antonio’s sense amplifier based flip-flop. DSTFF improves the PDP 9.1% and 47.8% as compared with dual-edge triggered sense amplifier based flip-flop and high speed dual-edge triggered modified hybrid latch flip-flop respectively.
An ultra low‐power double‐node‐upsets hardened latch design

Zhuo Chen,Yuqiao Xie,Jingfeng Liang,Dawei Bi,Zhiyuan Hu,Zhengxuan Zhang

DOI: https://doi.org/10.1002/cta.3990

IF: 2.378

2024-03-26

International Journal of Circuit Theory and Applications

Abstract:In order to reduce the influence of double‐node upset (DNU) on latches in single‐event effects (SEE) and solve the problem of high power of the other latches, a new radiation hardened by design (RHBD), namely low‐power double‐node‐upsets hardened latch (LPDHL) based on dual‐interlocked storage cell (DICE) is proposed. In this paper, a novel low‐cost, double‐node upset (DNU) tolerant latch aiming at nourishing the lack of these devices in the state of the art was presented, especially featuring high reliability while maintaining a low‐cost profile. The proposed latch is based on a low‐cost single event double‐node upset tolerant latch and also provides self‐recoverability against double‐node‐upsets. The latch uses clock‐controlled DICE (Dual‐interlocked storage cell) cell and CE(C‐Elements) cell to tolerate double‐node‐upsets fully. The Simulation waveforms and analysis results show that the proposed latch can maintain the correct output in any case of DNU. In addition, under the premise of high radiation tolerance, the minimum improvement of the area‐power‐delay product (APDP) of the proposed low‐power double‐node‐upsets hardened latch (LPDHL) is 16.60%, compared with the latest DNU tolerant latch on the literature.

engineering, electrical & electronic
A Single Event Upset Tolerant Latch with Parallel Nodes.

Changyong Liu,Nianlong Liu,Zhiting Lin,Xiulong Wu,Chunyu Peng,Qiang Zhao,Xuan Li,Junning Chen,Xuan Zeng,Xiangdong Hu

DOI: https://doi.org/10.1587/elex.16.20190208

2019-01-01

IEICE Electronics Express

Abstract:A single event upset (SEU) tolerant latch has been put forward in the current paper. By means of the parallel nodes structure design together with the layout-level optimization design, the proposed design is capable of substantially improving the immunity to SEU. In comparison with the conventional latch, the stacked latch with isolation and the dual-modular-redundancy (DMR) latch with C-element, the simulation results based on the 65 nm CMOS process demonstrate that the proposed latch performs much better in SEU mitigation. For P-hit simulation, the proposed latch can achieve a correct output in the end, no matter the struck PMOS is at OFF state or ON state. For N-hit simulation, the proposed latch is also capable of mitigating the voltage transient and recovering to original state eventually.
A Novel Low-Power and High-Speed Master-Slave D Flip-Flop

Hongli Gao,Fei Qiao,Dingli Wei,Huazhong Yang

DOI: https://doi.org/10.1109/TENCON.2006.344110

2007-01-01

Abstract:A novel low-power and high-speed master-slave D flip-flop (MSDFF) is proposed in this paper. Without clocked inverter on critical path, the flip-flop operation speed has been improved. Employing the pseudo-NAND logic in the slave stage, the flip-flop has a smaller clock capacitance load, which helps to reduce the power consumption. The proposed flip-flop is verified with GSMC 1.5 V-0.15 mum CMOS technology. Compared with the widely used conventional D flip-flop, 48% power-delay-product (PDP) saving can be achieved, and both the power consumption and transition delay performance are better than many other flip-flops
High Speed Soft-Error-Tolerant Latch and Flip-Flop Design for Multiple VDD Circuit

Saihua Lin,Huazhong Yang,Rong Luo

DOI: https://doi.org/10.1109/isvlsi.2007.50

2007-01-01

Abstract:In this paper, a novel soft-error-tolerant latch and a novel soft-error-tolerant flip-flop are presented for multiple VDD circuit design. By utilizing local redundancy, the latch and the flip-flop can recover from soft errors caused by cosmic rays and particle strikes. By using output feedback, implicit pulsed clock, and conditional discharged techniques, the proposed flip-flop can behave as a level converter and without the problems of static leakage and redundant switching activity. Since the setup time of the new flip flop is negative, it can further mitigate the impact of single event transient (SET) at the D input of the flip-flop. Experimental results show that compared to the traditional D soft-error-tolerant latch, the delay of the new D latch is 29.1% less but with a more than 16.5% power reduction. Compared to the traditional high speed level converting flip-flop, the D-Q delay and power of the new flip-flop are about 47.7% and 54% less than those of the traditional one respectively

A Novel SEU-Hardened D Flip-Flop

Implementation of Radiation Hardened Flip-Flops Based on Novel Fishbone Layouts

Experimental Investigation into Radiation-Hardening-by-design (RHBD) Flip-Flop Designs in a 65nm CMOS Process

Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-Nm UTBB FD-SOI Technology

Radiation-hardened Flip-Flop for Single Event Upset Tolerance

A Soft Error Detection and Recovery Flip-Flop for Aggressive Designs with High-Performance

A 2ghz Programmable Counter with New Re-Loadable D Flip-Flop

A Novel Self-Recoverable and Triple Nodes Upset Resilience DICE Latch

A Power-Delay-product Efficient and SEU-tolerant Latch Design

TRIGON: A Single-phase-clocking Low Power Hardened Flip-Flop with Tolerance to Double-Node-Upset for Harsh Environments Applications

A Low-Cost Error-Tolerant Flip-Flop Against SET and SEU for Dependable Designs

A Novel Highly Reliable and Low-Power Radiation Hardened SRAM Bit-Cell Design

A New Family of Sequential Elements with Built-in Soft Error Tolerance for Dual-VDD Systems

Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications

Dynamic Current Mode Logic Based Flip-Flop Design for Robust and Low-Power Security Integrated Circuits

Design of Single-Event Tolerant Latches in 65nm CMOS Technology for Enhanced Scan Delay Testing

Design of Novel, Semi-Transparent Flip-Flops (STFF) for High Speed and Low Power Application

An ultra low‐power double‐node‐upsets hardened latch design

A Single Event Upset Tolerant Latch with Parallel Nodes.

A Novel Low-Power and High-Speed Master-Slave D Flip-Flop

High Speed Soft-Error-Tolerant Latch and Flip-Flop Design for Multiple VDD Circuit