Abstract:Single event effect (SEE) induced mutual interference in CMOS circuits, including single event (SE) induced coupling effects (crosstalk) and modulation in local supply voltage on power-supply rails, was studied based on the increase in metal interconnect density. The dependence of SE vulnerability on metal interconnects was experimentally investigated using heavy ions and pulsed laser. Numerical simulation was performed to evaluate the modulation in local supply voltage induced by SEEs. Two groups of test structures with various metal interconnects between well contacts and the first metal layer were designed and fabricated. All other parts, including well contacts in the active regions, are of the same structures. Experimental results show that the upset cross section decreases with an increase in metal interconnect contact (CT) density between the active region and the first metal layer, suggesting a dominant contribution of rail voltage drop induced by charge sharing rather than SE-induced crosstalk. The differences in upset cross sections with cells of different CT hole densities appear the most evident ones under low frequency and high linear energy transfer value conditions. When transient-induced upsets play a more important role, the differences get weakened due to masking effects.

Analysis of Temporal Masking Effects on Master- and Slave-Type Flip-Flop SEUs and Related Applications

Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits

Research on low power technology based on Multi Bit Flip Flop

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Measurement and evaluation of the Single Event Effects of high-performance SerDes circuits

Comparison of Single Event Effect and Space Electrostatic Discharge Effect on FPGA Signal Transmission

A New Approach to Single Event Effect Tolerance Based on Asynchronous Circuit Technique

Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-Nm UTBB FD-SOI Technology

Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping

A Monte Carlo simulation flow for SEU analysis of sequential circuits

Implementation of Radiation Hardened Flip-Flops Based on Novel Fishbone Layouts

Effects of Temperature and Supply Voltage on Seu- and Set-Induced Single-Event Errors in Bulk 40-Nm Sequential Circuits

Fault modeling and characteristics of SRAM-based FPGAs (abstract only).

A Novel SEU-Hardened D Flip-Flop

New Insights into the Impact of SEUs in FPGA CRAMs

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

Mutual interference induced by single event effects in CMOS circuits

A Single Event Upset Tolerant Latch with Parallel Nodes.

Improved Low-Entropy Masking Scheme For Led With Mitigation Against Correlation-Enhanced Collision Attacks

Design and Verification of Multiple SEU Mitigated Circuits on SRAM-based FPGA System