Abstract:With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created by an additional BOX layer. In this work, seven different inverter chains with two kinds of core voltages, four kinds of channel areas and a stack inverter chain are designed to investigate the SET in advanced 22 nm FD-SOI CMOS technology. A NAND chain is also designed and used for comparison with inverter chains. The sensitivities of diverse SET targets are characterized with different core voltages and heavy-ion tilts. Results showed that the inverter size and the driving current can dominate the occurrence and width distribution of transient pulses. Besides, heavy-ion strike angle, LET, and charge sharing can also affect the pulse width. Though a high LET can deposit adequate energy, the widest pulses are measured in low-LET 84 Kr ion irradiation, rather than in high-LET ions' irradiation, which are attributed to the pulse quenching effect and being investigated by Hspice simulation. The LET dependency and low voltage induced SET widening are all observed in irradiation tests and verified by circuit-level pulse injection. All of the SET sensitive targets are distinguished. The results are highly effective for the designers to suppress and correct the SET-oriented errors to achieve a radiation robust system.

Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-Nm UTBB FD-SOI Technology

Implementation of Radiation Hardened Flip-Flops Based on Novel Fishbone Layouts

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Experimental Investigation into Radiation-Hardening-by-design (RHBD) Flip-Flop Designs in a 65nm CMOS Process

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs

A Single Event Upset Tolerant Latch with Parallel Nodes.

Evaluation of SEU Sensitivity in Hardened FPGA on Layout-based Sensitive Volume Method

Soft-error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies

A Novel SEU-Hardened D Flip-Flop

A Novel Self-Recoverable and Triple Nodes Upset Resilience DICE Latch

FOD Based ESD Protection Devices in Deep Sub-micron Technology

Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops

Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits

A Robust Hardened Latch Featuring Tolerance to Double-Node-Upset in 28nm CMOS for Spaceborne Application.

Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

A New Family of Sequential Elements with Built-in Soft Error Tolerance for Dual-VDD Systems

An ultra low‐power double‐node‐upsets hardened latch design

A New Scheme of the Low-Cost Multiple-Node-Upset-Tolerant Latch

TRIGON: A Single-phase-clocking Low Power Hardened Flip-Flop with Tolerance to Double-Node-Upset for Harsh Environments Applications