Abstract:The interaction of radiation with three-dimensional (3D) electronic devices can be determined through the detection of single-event effects (SEU). In this study, we propose a method for the evaluation of SEUs in 3D static random-access memories (SRAMs) induced by heavy-ion irradiation. The cross-sections (CSs) of different tiers, as a function of the linear energy transfer (LET) under high, medium, and low energy heavy-ion irradiation, were obtained through Monte Carlo simulations. The simulation results revealed that the maximum value of the CS was obtained under the medium-energy heavy-ion penetration, and the effect of penetration range of heavy ions was observed in different tiers of 3D-stacked devices. The underlying physical mechanisms of charge collection under different heavy-ion energies were discussed. Thereafter, we proposed an equation of the critical heavy-ion range that can be used to obtain the worst CS curve was proposed. Considering both the LET spectra and flux of galactic cosmic ray (GCR) and the variation in the heavy-ion Bragg peak values with the atomic number, we proposed a heavy-ion irradiation test guidance for 3D-stacked devices. In addition, the effectiveness of this method was verified through simulations of the three-tier vertically stacked SRAM and the ultrahigh-energy heavy-ion irradiation experiment of the two-tier vertically stacked SRAM. this study provides a theoretical framework for the detection of SEUs induced by heavy-ion irradiation in 3D-integrated devices.

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

SEU sensitivity and large spacing TMR efficiency of Kintex-7 and Virtex-7 FPGAs

Testing of a new type SEU-tolerant SRAM

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Simulation and Research on a 4T-Cell Based Duplication Redundancy SRAM for SEU Radiation Hardening

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

A Novel High-Density Single-Event Upset Hardened Configurable SRAM Applied to FPGA

Radiation Hardened 12T SRAM with Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

An SEU Hardened 65Nm/4t-Sram Cell for High Reliable Space Applications

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Experimental Studies of Single-Event Effects Induced by Heavy Ions

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Design and Verification of Multiple SEU Mitigated Circuits on SRAM-based FPGA System

Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs

Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-Nm UTBB FD-SOI Technology

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Characterization of LDO Induced Increment of SEE Sensitivity for 22-Nm FDSOI SRAM