Abstract:Static random-access memory (SRAM) circuits exposed to pulsed X- or γ-rays will suffer transient radiation upsets, which poses a significant challenge to their reliability. The transient radiation upsets are caused by global photocurrents, which are governed by the interconnect resistance of the power supply lines and the local photocurrents generated in each memory cell. Thus, accurate modeling of local photocurrents in each memory cell is essential for predicting the global photocurrents and transient radiation upset thresholds of SRAM circuits. In this study, the local photocurrents generated in a 0.18-μm complementary metal-oxide-semiconductor (CMOS) SRAM cell are extracted using a physics-based model of the actual device structure, rather than an analytical or experimental model. The memory cell containing six transistors and parasitic structures is accurately modeled in three-dimensions. Its responses to pulsed γ-rays are simulated with an in-house parallel semiconductor device simulation program, which enables the extraction of accurate local photocurrents. These local photocurrents, together with the interconnect resistance of the power supply lines in SRAM circuits, are modeled and simulated with an in-house parallel SPICE circuit solver. Using this approach, the global photocurrents in the 0.18-μm CMOS SRAM circuit irradiated with γ-rays are obtained and the known rail-span-collapse effect is observed. Finally, the transient radiation upset threshold of the SRAM circuit is predicted numerically and verified experimentally.

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Testing of a new type SEU-tolerant SRAM

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

SEU in SRAMs Due to 2.5 MeV, 14 MeV and Reactor Neutrons

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Investigation of the Impact of Angles and Rotation of Low Energy Protons in SRAM Cells Down to 16nm

Single Event Upsets Under Proton, Thermal, and Fast Neutron Irradiation in Emerging Nonvolatile Memories

Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs

Single-event Effects Induced by Medium-Energy Protons in 28 Nm System-on-chip

The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM

Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 Nm FDSOI SRAMs

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Simulation of Transient Radiation Upset in a 0.18-Μm CMOS SRAM by Accurately Modeling a 6T Memory Cell

A Reliable and high performance Radiation Hardened Schmitt Trigger 12T SRAM cell for space applications

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

SEU Effects Induced by Reactor Spallation and Accelerator Neutron Sources in Nano-SRAMs

Influences of Supply Voltage on Single Event Upsets and Multiple-Cell Upsets in Nanometer SRAM Across a Wide Linear Energy Transfer Range*

Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications

Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results