Abstract:In this paper, the temperature dependence of single event upset (SEU) cross-section in 28 nm embedded Static Random Access Memory (SRAM) of System in Package (SiP) was investigated. An atmospheric neutron beam with an energy range of MeV~GeV was utilized. The SEU cross-section increased by 39.8% when the temperature increased from 296 K to 382 K. Further Technology Computer Aided Design (TCAD) simulation results show that the temperature has a weak impact on the peak pulse current, which is mainly caused by the change of bipolar amplification effect with temperature. As the temperature increases, the critical charge of the device decreases by about 4.8%. The impact of temperature on the SEU cross-section is determined competitively by the peak pulse current and the critical charge. The impact of temperature on critical charge is expected to become more severe as the feature size is further advanced.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the influence of atmospheric neutrons on single - event upsets (SEU) in 28 - nm embedded SRAM (Static Random - Access Memory) under different temperature conditions. Specifically, the researchers explored through experiments how temperature changes affect the SEU cross - section of SRAM under atmospheric neutron radiation and analyzed the underlying physical mechanisms. ### Main problems 1. **Influence of temperature on SEU cross - section**: - The researchers irradiated 28 - nm embedded SRAM with an atmospheric neutron beam (energy range from MeV to GeV) to explore the influence of temperature changes on the SEU cross - section. - The experimental results show that when the temperature increases from 296 K to 382 K, the SEU cross - section increases by 39.8%. 2. **Analysis of physical mechanisms**: - Through TCAD simulation, the researchers analyzed the influence of temperature on the peak pulse current and the critical charge. - The results indicate that the influence of temperature on the peak pulse current is weak, mainly because of the change in the bipolar amplification effect caused by temperature changes. - As the temperature rises, the critical charge of the device decreases by about 4.8%. - The change in the SEU cross - section is determined jointly by the peak pulse current and the critical charge. ### Key findings - **Relationship between SEU cross - section and temperature**: - When the temperature increases from 296 K to 382 K, the SEU cross - section increases by 39.8%. - The influence of temperature on the SEU cross - section has a linear relationship, and the slope of the linear fit is 4.86 × 10^(-17) cm²/bit/K. - **Physical mechanisms**: - **Deposited charge**: The increase in temperature causes the bandgap of Si materials to narrow, thus generating more electron - hole pairs. The change in the bandgap with temperature can be described by the following formula: \[ E_g(T)=E_g(0)-\frac{\alpha T^2}{T + \beta} \] where \(T\) is the absolute temperature, \(E_g(0)\) is the bandgap energy at 0 K, and \(\alpha\) and \(\beta\) are material parameters. For silicon, \(\alpha = 4.3\times 10^{-4}\text{eV/K}\), \(\beta = 636\text{K}\). - **Charge collection efficiency**: Temperature changes affect the drift, diffusion, and bipolar amplification effects during the charge collection process. The increase in temperature causes the mobility to decrease, thus reducing the drift charge; the increase in temperature also affects the diffusion length, changing the diffusion charge; the bipolar amplification effect is enhanced as the temperature rises, increasing the amount of collected charge. ### Conclusion This research systematically analyzed the influence of temperature on the SEU cross - section of 28 - nm embedded SRAM under atmospheric neutron radiation and its physical mechanisms through experiments and simulations. The research results are helpful for understanding the influence of temperature on the reliability of electronic devices and provide a theoretical basis for designing more reliable electronic systems.

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