Abstract:The possibility of using calibrated static random-access memory (SRAM) memory for the quantification of neutron fluence in a radiotherapy facility for cancer treatment utilizing a high-energy 15-MV photon beam (Bremsstrahlung) from an electron linear accelerator has been exploited in this work. This has been performed by varying the field size of the photon beam and the positioning of the SRAM memory at three different positions in relation to the isocenter of the beam. The measurements demonstrated that neutrons originating from interactions between the high-energy photons and accelerator parts with high-Z materials are able to induce single-event upsets (SEUs) in the SRAM memory, where the measured SEUs depend on the measurement location. Monte Carlo (MC) simulations have been performed to retrieve the neutron fluence under each investigated measurement condition. Using the simulated neutron fluence differential in energy and the interactions cross sections determined previously, the expected SEUs were computed. The comparison between measured and simulated SEUs normalized to the linear accelerators (linac) output shows acceptable agreement within the experimental uncertainties. As exposure to secondary neutrons poses a risk to all patients, especially the ones with pacemakers or other electronical aids, the feasibility of establishing the neutron fluence through SEU quantification in an SRAM device provides new opportunities to estimate the associated risk in a clinical environment. Further work can be performed to investigate the correlation between the high-Z linac components and the neutron fluence during patient irradiation to better comprehend the variation between different linac types and manufacturers.

Monte Carlo Simulation for Predicting Neutron-Induced Single-Event Upset in Ferroelectric Random Access Memory

Single Event Effects in Commercial FRAM and Mitigation Technique Using Neutron-Induced Displacement Damage

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

Analysis of SEE Modes in Ferroelectric Random Access Memory Using Heavy Ions

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Impact of Coulomb elastic scattering of protons and iron ions on single-event upsets in a 22 nm SOI SRAM

Low-energy Neutron-Induced Single-Event Upsets in Static Random Access Memory

SEU in SRAMs Due to 2.5 MeV, 14 MeV and Reactor Neutrons

Neutron induced single event upset in CMOS simulated with Geant4

Identification of Pulsed-Neutron-Induced Upset Bursts in Static Random Access Memories using Monte-Carlo Simulations

SEU Effects Induced by Reactor Spallation and Accelerator Neutron Sources in Nano-SRAMs

Influence of 0.1-10 MeV neutron-induced SEUs on estimation of terrestrial SER in a nano-scale SRAM

The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM

Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP

Experimental investigations on pulsed neutron radiation effect on commercial CMOS SRAMs

Single-Event Upset Prediction in SRAMs Account for On-Transistor Sensitive Volume

Experimental Study on Neutron Single Event Effects of Commercial SRAMs Based on CSNS

Feasibility of a neutron detector-dosemeter based on single-event upsets in dynamic random-access memories

Quantification of Neutron-Induced Single-Event Upsets in a Static Random-Access Memory by Clinical High-Energy Photon Beam

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA