Abstract:The contribution of Coulomb elastic scattering of protons and heavy ions to single-event upsets (SEUs) is concerned in nanometric electronic devices. In this work, Monte Carlo Geant4 simulations are used to investigate the impact of Coulomb elastic scattering of protons and iron ions on SEUs in a 22 nm silicon-on-insulator (SOI) static random access memory (SRAM). The SEU cross section and multiple-bit upset (MBU) proportion versus incident energy curves for protons and iron ions have been estimated for the SRAM thanks to numerical Geant4 simulations. The ionization processes of ionizing radiation causing SEUs are sorted into three parts: direct ionization from primary particles, indirect ionization from Coulomb recoil atoms, and indirect ionization from secondary particles produced by nuclear reactions. Their relative contributions to SEUs and MBUs are analyzed. The contribution of Coulomb elastic scattering to SEUs cannot be neglected in the energy range from 2 to 6 MeV and below 40 MeV for protons and iron ions, respectively. In the case of iron ion incidence, it is observed that the total SEU cross section decreases in the energy range from 16 to 40 MeV. It can be attributed to the decrease in the Coulomb elastic scattering cross section of iron ions. The probability distributions of energy deposited in the sensitive volumes (SVs) are calculated for iron ions with different energies. The sources of energy deposited in an SV can be sorted into three cases. The three parts of the probability distribution of deposited energy corresponding to these three cases change with increasing incident energy, which can well explain the observed SEU response.

Neutron induced single event upset in CMOS simulated with Geant4

The effect of heavy metal in CMOS on neutron induced single event upset simulated with Geant4

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SEU in SRAMs Due to 2.5 MeV, 14 MeV and Reactor Neutrons

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

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Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Monte Carlo Simulation for Predicting Neutron-Induced Single-Event Upset in Ferroelectric Random Access Memory

Role of Elastic Scattering in Low-Energy Neutron-Induced SEUs in a 40-Nm Bulk SRAM

Impact of Coulomb elastic scattering of protons and iron ions on single-event upsets in a 22 nm SOI SRAM

Heavy Ion Induced SEU Sensitivity Evaluation of 3D Integrated SRAMs

Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs

Identification of Pulsed-Neutron-Induced Upset Bursts in Static Random Access Memories using Monte-Carlo Simulations

Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits

Mutual interference induced by single event effects in CMOS circuits

Simulation of SEU Response of Advanced 20 Nm FDSOI SRAMs

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment