Abstract:The possibility of using calibrated static random-access memory (SRAM) memory for the quantification of neutron fluence in a radiotherapy facility for cancer treatment utilizing a high-energy 15-MV photon beam (Bremsstrahlung) from an electron linear accelerator has been exploited in this work. This has been performed by varying the field size of the photon beam and the positioning of the SRAM memory at three different positions in relation to the isocenter of the beam. The measurements demonstrated that neutrons originating from interactions between the high-energy photons and accelerator parts with high-Z materials are able to induce single-event upsets (SEUs) in the SRAM memory, where the measured SEUs depend on the measurement location. Monte Carlo (MC) simulations have been performed to retrieve the neutron fluence under each investigated measurement condition. Using the simulated neutron fluence differential in energy and the interactions cross sections determined previously, the expected SEUs were computed. The comparison between measured and simulated SEUs normalized to the linear accelerators (linac) output shows acceptable agreement within the experimental uncertainties. As exposure to secondary neutrons poses a risk to all patients, especially the ones with pacemakers or other electronical aids, the feasibility of establishing the neutron fluence through SEU quantification in an SRAM device provides new opportunities to estimate the associated risk in a clinical environment. Further work can be performed to investigate the correlation between the high-Z linac components and the neutron fluence during patient irradiation to better comprehend the variation between different linac types and manufacturers.

Identification of Pulsed-Neutron-Induced Upset Bursts in Static Random Access Memories using Monte-Carlo Simulations

Comparative Analysis of Upset-Multiplicity Occurrences Due to Flash X-rays and Pulsed Neutrons in Commercial SRAMs

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

SEU in SRAMs Due to 2.5 MeV, 14 MeV and Reactor Neutrons

Monte Carlo Simulation for Predicting Neutron-Induced Single-Event Upset in Ferroelectric Random Access Memory

SEU Effects Induced by Reactor Spallation and Accelerator Neutron Sources in Nano-SRAMs

Experimental Study of the Impact of Temperature on Atmospheric Neutron-Induced Single Event Upsets in 28 nm Embedded SRAM of SiP

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Quantification of Neutron-Induced Single-Event Upsets in a Static Random-Access Memory by Clinical High-Energy Photon Beam

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs

Simulation of Transient Radiation Upset in a 0.18-Μm CMOS SRAM by Accurately Modeling a 6T Memory Cell

Role of Elastic Scattering in Low-Energy Neutron-Induced SEUs in a 40-Nm Bulk SRAM

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Feasibility of a neutron detector-dosemeter based on single-event upsets in dynamic random-access memories

Neutron induced single event upset in CMOS simulated with Geant4

Impact of Coulomb elastic scattering of protons and iron ions on single-event upsets in a 22 nm SOI SRAM

Neutron-induced effects on a self-refresh DRAM

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

Evaluation of Single Event Upset on a Relay Protection Device