Abstract:As one of the important parts of the space system, the reliability of the SRAM storage circuit always affects the safety of the spacecraft. The harsh environment full of radiation and extreme temperature in space brings radiation effect and aging effect to the circuit, which causes accidental damage and life reduction of the device, and in serious cases, circuit error and system failure. In this paper, from the perspective of fault model and fault injection, the hybrid modeling method of device level and circuit level is adopted to establish the fault model. At the same time, the sensitive area and the randomness of the fault are considered, and the switching factor is introduced to comprehensively consider the fault injection to improve the accuracy of the model. A device-level Metal-OxideSemiconductor Field-Effect Transistor (MOSFET) simulation model is established in Technology Computer-Aided Design (TCAD), and the process calibration of the established MOSFET model is carried out through the process library file, to better approximate the actual model. Combined with the established MOSFET device model, the failure mechanism of single-particle effect in radiation effect and negative bias temperature instability effect in aging effect was studied. Based on the physical mechanism of the device level, the fault is mapped to the circuit level and the corresponding hybrid model is established. Combined with the advantages of the Veriloga language, the current source, and voltage source models are established, and the fault sensitive area and the randomness of fault occurrence are considered, and the switching factor is introduced into the fault model. Then, the established fault model is injected into the SRAM storage circuit in the form of fault devices for fault simulation, and the power current data is collected and compared with the fault model without a switching factor. Taking the measured data as a reference, the data errors of the two are compared. Experimental results show that the proposed fault model fits the actual data better and has higher accuracy.

Simulation of Transient Radiation Upset in a 0.18-Μm CMOS SRAM by Accurately Modeling a 6T Memory Cell

Study on the Transient Ionization Radiation Damage Pattern of 0.18μm SRAM

Experimental investigations on pulsed neutron radiation effect on commercial CMOS SRAMs

A Novel Single Event Upset Hardened Cmos Sram Cell

Prediction of Low-Let Ion Induced Single Event Upset Cross Sections for Advanced SRAM

Study on the Dose Rate Upset Effect of Partially Depleted Silicon-on-insulator Static Random Access Memory

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Single-Event Upset Prediction in SRAMs Account for On-Transistor Sensitive Volume

Design of a High-Performance 12T SRAM Cell for Single Event Upset Tolerance

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Single-Event Multiple Effect Tolerant RHBD14T SRAM Cell Design for Space Applications

Heavy Ion Testing and Numerical Modeling of Single EventMultiple-Cell Upsets on 90 nm Bulk CMOS SRAM

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Testing of a new type SEU-tolerant SRAM

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

Identification of Pulsed-Neutron-Induced Upset Bursts in Static Random Access Memories using Monte-Carlo Simulations

Fault Injection Model of SRAM Memory Circuit Based on Hybrid Modeling

Simulation of the RRAM based Nonvolatile SRAM cell

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Comparative Analysis of Upset-Multiplicity Occurrences Due to Flash X-rays and Pulsed Neutrons in Commercial SRAMs