Highly Compact 1T-1R Architecture (4f(2) Footprint) Involving Fully Cmos Compatible Vertical Gaa Nano-Pillar Transistors and Oxide-Based Rram Cells Exhibiting Excellent Nvm Properties and Ultra-Low Power Operation
X. P. Wang,Z. Fang,X. Li,B. Chen,B. Gao,J. F. Kang,Z. X. Chen,A. Kamath,N. S. Shen,N. Singh,G. Q. Lo,D. L. Kwong
DOI: https://doi.org/10.1109/iedm.2012.6479082
2012-01-01
Abstract:For the first time, nano-meter-scaled 1T-1R non-volatile memory (NVM) architecture comprising of RRAM cells built on vertical GAA nano-pillar transistors, either junction-less or junction-based, is systematically investigated. Transistors are fabricated using fully CMOS compatible technology and RRAM cells are stacked onto the tip of the nano-pillars (with a diameter down to ~37nm) to achieve a compact 4F2 footprint. In addition, through this platform, different RRAM stacks comprising CMOS friendly materials are studied, and it is found that TiN/Ni/HfO2/n+-Si RRAM cells show excellent switching properties in either bipolar or unipolar mode, including (1) ultra-low switching current/power: SET ~20nA/85nW and RESET ~200pA/700pW, (2) multi-level switchability, (3) good endurance, >105, (4) satisfactory retention, 10 years at 85oC; and (5) fast switching speed ~50ns. Moreover, this vertical (gate-all-around) GAA nano-pillar based 1T-1R architecture provides a more direct and flexible test vehicle to verify the scalability and functionality of RRAM candidates with a dimension close to actual application.