Abstract:The possibility of using calibrated static random-access memory (SRAM) memory for the quantification of neutron fluence in a radiotherapy facility for cancer treatment utilizing a high-energy 15-MV photon beam (Bremsstrahlung) from an electron linear accelerator has been exploited in this work. This has been performed by varying the field size of the photon beam and the positioning of the SRAM memory at three different positions in relation to the isocenter of the beam. The measurements demonstrated that neutrons originating from interactions between the high-energy photons and accelerator parts with high-Z materials are able to induce single-event upsets (SEUs) in the SRAM memory, where the measured SEUs depend on the measurement location. Monte Carlo (MC) simulations have been performed to retrieve the neutron fluence under each investigated measurement condition. Using the simulated neutron fluence differential in energy and the interactions cross sections determined previously, the expected SEUs were computed. The comparison between measured and simulated SEUs normalized to the linear accelerators (linac) output shows acceptable agreement within the experimental uncertainties. As exposure to secondary neutrons poses a risk to all patients, especially the ones with pacemakers or other electronical aids, the feasibility of establishing the neutron fluence through SEU quantification in an SRAM device provides new opportunities to estimate the associated risk in a clinical environment. Further work can be performed to investigate the correlation between the high-Z linac components and the neutron fluence during patient irradiation to better comprehend the variation between different linac types and manufacturers.

Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits

Influence of 0.1-10 MeV neutron-induced SEUs on estimation of terrestrial SER in a nano-scale SRAM

Thermal neutron induced soft error rate measurement in semiconductor memories and circuits

Measurement of Neutron-induced Single Event Upset Cross-Section of UltraScale Kintex FPGA Using Time-of-Flight Technique

Experimental Study on Neutron Single Event Effects of Commercial SRAMs Based on CSNS

Simulation and Experiment in Neutron Induced Single Event Effects in SRAM

SEU in SRAMs Due to 2.5 MeV, 14 MeV and Reactor Neutrons

Single-Event Upsets in SRAMs with Scaling Technology Nodes Induced by Terrestrial, Nuclear Reactor, and Monoenergetic Neutrons

Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation

Neutron induced single event upset in CMOS simulated with Geant4

Experimental investigations on pulsed neutron radiation effect on commercial CMOS SRAMs

SEU Effects Induced by Reactor Spallation and Accelerator Neutron Sources in Nano-SRAMs

Impact of Irradiation Side on Muon-Induced Single Event Upsets in 65-nm Bulk SRAMs

Low-energy Neutron-Induced Single-Event Upsets in Static Random Access Memory

Single Event Upset on Static Random Access Memory Devices Due to Spallation, Reactor, and Monoenergetic Neutrons

Quantification of Neutron-Induced Single-Event Upsets in a Static Random-Access Memory by Clinical High-Energy Photon Beam

Measurement of Single Event Effect cross section induced by monoenergetic protons on a 130 nm ASIC

Role of Elastic Scattering in Low-Energy Neutron-Induced SEUs in a 40-Nm Bulk SRAM

Atmospheric Neutron Single Event Effect Test on Xilinx 28 Nm System on Chip at CSNS-BL09

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment

Energy Dependence of Atmospheric Neutron-Induced Failures in Silicon Carbide Power Devices