Abstract:The circuit-level simulation analysis of the single event transient response of an on-chip single event latchup protection switch (SPS cell), previously designed and developed in the IHP 250 nm CMOS process, is presented. The SPS cell provides the latchup protection for standard cells on the principle of power domain control. It is based on a sensing/driving PMOS transistor which acts both as a latchup sensor and a driver for the standard cells, and includes additional PMOS and NMOS transistors for controlling the sensing/driving transistor and interfacing to the external control logic. The previous work has confirmed the SPS cell’s functionality in the case of single event latchup, and the experimental investigation has proven that the SPS cell is immune to single event latchup for LET values up to 74.8 MeV∙cm2/mg. This case study extends the previous research by introducing the circuit-level simulation of the SPS cell’s response to the single event transients (SETs). Using the square pulse current as a SET model, the amplitude and duration of the SET-induced voltage pulses at the SPS cell’s outputs have been analyzed with respect to the injected charge, operating temperature, supply voltage, load (number of standard cells connected to the SPS cell) and sensing/driving transistor’s channel width. The results have shown that the immunity of the SPS cell to SETs can be significantly enhanced by connecting a larger number of standard cells to the SPS cell and increasing the sensing/driving transistor’s size, without any area overhead. An analytical expression for calculating the critical charge in terms of the transistor size and the number of standard cells connected to the SPS cell has been derived. Moreover, the SPS cell can be used as a SET sensor for detecting the levels of injected charge which cannot be mitigated by the increase of transistor size and load, and in conjunction with the external control logic it could be possible to measure the SET duration and perform online corrections of the SET-induced faults in the standard cells supplied by the SPS cell.

Analysis of single event transient pulse-width in 65 nm commercial radiation-hardened logic cell

Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

Layout Based Radiation Hardening Techniques Against Single-Event Transient

Single-Event Transient Study of 28 nm UTBB-FDSOI Technology Using Pulsed Laser Mapping

Improved On-Chip Self-Triggered Single-Event Transient Measurement Circuit Design and Applications

Characterization of Single-Event Transients Induced by High LET Heavy Ions in 16 Nm Bulk FinFET Inverter Chains

Pulse Quenching Effect Characterized by Inverter Chains under Heavy-ion Irradiation in 28-Nm CMOS Technology

Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier

Characterization and Modeling of SET Generation Effects in CMOS Standard Logic Cells

Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch

Characterization of Single Event Effect in a Radiation Hardened Programmable Read-Only Memory in a 130 nm Bulk CMOS Technology

ESD Pulse Width Effect on RC-triggered NMOS with Power on or Off

Investigation of Turn-on Speeds of Electrostatic Discharge Protection Devices Using Transmission-Line Pulsing Technique

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains under Pulsed Laser and Heavy-Ion Irradiation

Evaluation of Single-Event-Transient Effects in Reconfigurable Field Effect Transistor Beyond 3 Nm Technology Node

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Hardness-by-design approach for 0.15 /spl mu/m fully depleted CMOS/SOI digital logic devices with enhanced SEU/SET immunity

A Holistic Approach for Characterization of SET Effects in a Standard Digital Cell Library

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Experimental Study of Transient Dose Rate Effect on System-in-Package SZ0501

Investigation of laser-induced single event effect on SiGe BiCMOS low noise amplifiers