Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

Rong Mei Chen,Z. J. Diggins,N. N. Mahatme,Liang Wang,En Xia Zhang,Y. P. Chen,Yi N. Liu,Balaji Narasimham,Arthur F. Witulski,Bharat L. Bhuva,Daniel M. Fleetwood
DOI: https://doi.org/10.1109/TNS.2016.2614963
IF: 1.703
2017-01-01
IEEE Transactions on Nuclear Science
Abstract:Synergetic effects of total-ionizing-dose irradiation on the single event upset (SEU) and single event transient (SET) performance of 40-nm sequential circuits are studied at doses up to 2 Mrad(SiO2). The impacts of input pattern and supply voltage are evaluated. An initial increase of SEU- and SET-induced soft error cross-section versus total dose is observed, followed by a decreasing trend at hi...
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