Abstract:The static random-access memory (SRAM) physical unclonable function (PUF) uses the power-up states of stored values to derive the identification code. Its lightweight circuit design makes it suitable for power-sensitive satellites. However, the SRAM PUF is significantly affected by high-energy particles and cosmic rays in space, which causes incorrect output of identity authentication codes and further leading to a degradation in reliability. Recently, the main research works are concerned about the impact of cosmic rays induced total ionizing dose effects on the SRAM PUF, and few reports discuss the high-energy particles induced single event effects on the SRAM PUF. This paper presents the reliability results of planar and FinFET-based SRAM PUFs after high-energy heavy ion experiments. Experimental results indicate that 3%–10% of the SRAM PUF bits change from their original power-on states, which demonstrate that ion-induced microdose effects degrade the reliability of SRAM PUFs. In addition, the three-dimensional technology computer-aided design simulation tool is used to analyze the physical mechanisms of the experimental phenomena. Simulation results show that the heavy ion-induced microdose effect ionizes and produces trapped charges at the silicon/insulation interface, which causes a slight change in transistor leakage current or a slight drift in threshold voltage. The physical mechanisms lead to an off-state current mismatch in the SRAM cell and finally affect the stored values after power-on.

Gate breakdown induced stuck bits in sub-20 nm FinFET SRAM

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

SEE Sensitivity Evaluation for Commercial 16 nm SRAM-FPGA

Electron-Induced Single-Event Effect in 28 nm SRAM-Based FPGA

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

Study on the Dose Rate Upset Effect of Partially Depleted Silicon-on-insulator Static Random Access Memory

The Gate Length Dependence of Single Event Upset in 14nm Bulk and SOI Finfet Sram Cells

Simulation Study on the Charge Collection Mechanism of FinFET Devices in Single-Event Upset

Single Event Upset Sensitivity of 45 Nm FDSOI and SOI FinFET SRAM

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

The impact of line edge roughness on the stability of a FinFET SRAM

Influence of Fin Width on Single Event-Upset Characteristics of FinFET SRAM

Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs

Using Post-Breakdown Conduction Study in a MIS Structure to Better Understand the Resistive Switching Mechanism in an MIM Stack

Investigation of Endurance Behavior on HfZrO-Based Charge-Trapping FinFET Devices by Random Telegraph Noise and Subthreshold Swing Techniques

Roles of the Gate Length and Width of the Transistors in Increasing the Single Event Upset Resistance of SRAM Cells

On the Understanding and Modeling of Non-Negligible Subthreshold-State Degradation (SSD) in Sub-20-nm DRAM Technology

The single event upset hardened design of spin transfer torque magnetic random access memory read circuits at 40 nm technology

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Experimental investigations on pulsed neutron radiation effect on commercial CMOS SRAMs

Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells with High- $\kappa$ Interpoly Gate Dielectric Stacks