Abstract:Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of Phi(M1)/Phi(M2) have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

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Effects of Gate Metal Work Function and Line Edge Roughness on the Variability of Junctionless Field-Effect Transistor

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Three-dimensional Modeling of Core-structured Field Effect Transistor

Study of Work-Function Variation Effects in Multigate Tunneling Field Effect Transistors

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

The Effects of Elliptical Gate Cross Section on Carbon Nanotube Gate-All-around Field Effect Transistor

The Dual Effects of Gate Dielectric Constant in Tunnel FETs

A comparative study of work function variations in III-V heterojunction and homojunction tunnel field-effect transistors

Study of Synthetic Electric Field Effects and Quantum Confinement Effects in Extremely Scaled Gate-All-Around Tunnel FET

Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FET

Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

The impact of device parameter variation on double gate tunneling FET and double gate MOSFET

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Effects of Drain Doping Profile and Gate Structure on Ambipolar Current of TFET

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Simulation study of short channel effects in junctionless SOI MOSFETS

Analytical Models for Threshold Voltage, Drain Induced Barrier Lowering Effect of Junctionless Triple-Gate Finfets

Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors