Abstract:We perform a comparative study (both for device and circuit simulations) of three carbon nanotube tunneling field-effect transistor (CNT-TFET) designs: high-K gate dielectric TFETs (HK-TFETs), hetero gate dielectric TFETs (HTFETs) and a novel CNT-TFET-based combination of light doping and hetero gate dielectric TFETs (LD-HTFETs). At device level, the effects of channel and gate dielectric engineering on the switching and high-frequency characteristics for CNT-TFET have been theoretically investigated using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions solved self-consistently with Poisson's equations. It is revealed that the proposed LD-HTFET structure can significantly reduce leakage current, enhance control ability of the gate on the channel, improve the switching speed, and is more suitable for use in low-power, high-frequency circuits. At circuit level, using HSPICE with look-up table-based Verilog-A models, the performance and reliability of CNT-TFET logic gate circuits is evaluated on the basis of power consumption, average delay, stability, energy consumption and power-delay product (PDP). Simulation results indicate that, compared to a traditional CNT-TFET-based circuit, the one based on LD-HTFET has a significantly better performance (static noise margin, energy, delay, PDP). It is also observed that our proposed design exhibits better robustness under different operational conditions by considering power supply voltage and temperature variations. Our results may be useful for designing and optimizing CNTFET devices and circuits.

The Dual Effects of Gate Dielectric Constant in Tunnel FETs

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Quantum Transport Study of Si Ultrathin-Body Double-Gate Pmosfets: ${I}$ – ${V}$ , ${C}$ – ${V}$ , Energy Delay, and Parasitic Effects

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Effects of Gate Metal and Channel Shape on the Variability of Junctionless Field-Effect Transistor

The impact of device parameter variation on double gate tunneling FET and double gate MOSFET

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Numerical Study On Dual Material Gate Nanowire Tunnel Field-Effect Transistor

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Gate Current for MOSFETs with High k Dielectric Materials

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

A Gate Leakage Model for Double Gate Tunneling Field-Effect Transistors

The Effects of Elliptical Gate Cross Section on Carbon Nanotube Gate-All-around Field Effect Transistor

Simulation of Thin-TFETs Using Transition Metal Dichalcogenides: Effect of Material Parameters, Gate Dielectric on Electrostatic Device Performance

A Numerical Study on Graphene Nanoribbon Heterojunction Dual-Material Gate Tunnel Fet

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Investigation of Reliability Issues in a hybrid Extended Dual Source Double Gate Tunnel FET