Abstract:Recently, short channel effects (SCE) and power consumption dissipation problems pose big challenges which need imperative actions to be taken to deal with for field effect transistor to further scale down as semiconductor technology enters into sub-10nm technology node. From 3nm technology node and beyond, gate all around field effect transistor steps onto the history stage attributed to its improved SCE suppressing ability thanks to surrounding gate structure. Herein, we demonstrate the super electrostatic control ability of a double-gated nanotube gate all around field effect transistor (DG NT GAAFET) in comparison with nanotube (NT GAAFET) and nanowire gate all around field effect transistor (NW GAAFET) with the same device parameters designed. Ion boosts of 62% and 57% have been obtained in DG NT GAAFET in comparison with those of NT GAAFET and NW GAAFET. Besides, substantially suppressed SCEs have been obtained in DG NT GAAFET due to enhanced electrostatic control, which are certificated by improved Ioff, SS, and Ion/Ioff ratio obtained. On the other hand, the Ion of NT GAAFET is comparable with that of NW GAA-FET. Whereas, its Ioff is 1 order smaller, and SS is almost 2 times smaller compared with those of NW GAA-FET, manifesting the meliority of nanotube channel structure. In the end, the robustness of nanotube channel structure, especially double gated one, against Lg scaling has been verified with TCAD simulation study.

The Effects of Elliptical Gate Cross Section on Carbon Nanotube Gate-All-around Field Effect Transistor

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Influence of Channel Length, Thickness, and Crystal Orientation in Ultra-Scaled Double-Gate Pmosfets

Investigation on self-heating effect in carbon nanotube field-effect transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Effects of Gate Metal and Channel Shape on the Variability of Junctionless Field-Effect Transistor

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Full-Band Quantum Transport Based Simulation for Carbon Nanotube Field Effect Transistor from Chirality to Device Performance

Investigation of Schottky–Barrier Carbon Nanotube Field-Effect Transistor by an Efficient Semi-Classical Numerical Modeling

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Modeling And Simulation Of Carbon Nanotube-Semiconductor Heterojunction Vertical Field Effect Transistors

3D Monte Carlo Simulation of gate-All-around germanium nMOSFET with Effective potential Quantum Correction.

3d Monte Carlo Simulation Of Gate-All-Around Germanium Nmosfet

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors

Modelling of Chirality-Dependent Current-Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

The Dual Effects of Gate Dielectric Constant in Tunnel FETs

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors