Abstract:We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be carefully considered in device design, especially when the gate oxide is thin. The channel length scaling limit imposed by source-drain tunneling is found to be between 5nm and 10nm, depending on the off-current specification. Using a large diameter tube increases the on-current, but it also increases the leakage current. Our study of gate dielectric scaling shows that the charge on the nanotube can play an important role above threshold.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is related to the scaling of Schottky Barrier Carbon Nanotube Transistors (SB - CNTFETs). Specifically, the research aims to comprehensively explore the performance changes of SB - CNTFETs under different parameters through self - consistent atomic - scale simulations, especially in the following aspects: 1. **Bipolar conduction phenomenon**: When the gate oxide layer is very thin, SB - CNTFETs exhibit significant bipolar conduction characteristics, which pose a challenge to device design. The research needs to understand how to consider this characteristic in the design, especially when the gate oxide layer is thin. 2. **Channel length scaling limit**: What is the channel length scaling limit determined by the source - drain tunneling effect? Research shows that this limit is approximately between 5nm and 10nm, depending on the requirements of the off - state current. 3. **Influence of nanotube diameter**: Increasing the nanotube diameter can increase the on - current, but it will also increase the leakage current at the same time. Therefore, it is necessary to balance the relationship between the two. 4. **Influence of gate insulator thickness and dielectric constant**: How do the thickness and dielectric constant of the gate insulator affect device performance? Research shows that a high - κ gate insulator can improve the on - current, similar to the case of MOSFETs. 5. **Source - drain voltage scaling**: How does the change of the source - drain voltage affect the I - V characteristics of the device? Reducing the power supply voltage can reduce the minimum leakage current, but it will also affect the on - current. 6. **Sub - threshold swing**: Can the sub - threshold swing of SB - CNTFETs reach the ideal value (60mV/dec), or is it limited by other factors? Through these studies, the author hopes to provide a theoretical basis for optimizing the design of SB - CNTFETs and reveal its potential and limitations in high - performance applications.

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Electrostatic Engineering of Nanotube Transistors for Improved Performance

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Modeling And Simulation Of Carbon Nanotube-Semiconductor Heterojunction Vertical Field Effect Transistors

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Scaling carbon nanotube CMOS FETs towards quantum limit

A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

Improving Subthreshold Swing to Thermionic Emission Limit in Carbon Nanotube Network Film-Based Field-Effect

Exploration of Vertical Scaling Limit in Carbon Nanotube Transistors

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Study of Synthetic Electric Field Effects and Quantum Confinement Effects in Extremely Scaled Gate-All-Around Tunnel FET

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

A Compact Physical Drain Current Model of Multitube Carbon Nanotube Field Effect Transistor Including Diameter Dispersion Effects

Carbon Nanotubes as Schottky Barrier Transistors

Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts