Abstract:The scaling of bulk Si-based transistors has reached its limits, while novel architectures such as FinFETs and GAAFETs face challenges in sub-10 nm nodes due to complex fabrication processes and severe drain-induced barrier lowering (DIBL) effects. An effective strategy to avoid short-channel effects (SCEs) is the integration of low-dimensional materials into novel device architectures, leveraging the coupling between multiple gates to achieve efficient electrostatic control of the channel. We employed TCAD simulations to model multi-gate FETs based on various dimensional systems and comprehensively investigated electric fields, potentials, current densities, and electron densities within the devices. Through continuous parameter scaling and extracting the sub-threshold swing (SS) and DIBL from the electrical outputs, we offered optimal MoS2 layer numbers and single-walled carbon nanotube (SWCNT) diameters, as well as designed structures for multi-gate FETs based on monolayer MoS2, identifying dual-gate transistors as suitable for high-speed switching applications. Comparing the switching performance of two device types at the same node revealed CNT's advantages as a channel material in mitigating SCEs at sub-3 nm nodes. We validated the performance enhancement of 2D materials in the novel device architecture and reduced the complexity of the related experimental processes. Consequently, our research provides crucial insights for designing next-generation high-performance transistors based on low-dimensional materials at the scaling limit.

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Electrostatic Engineering of Nanotube Transistors for Improved Performance

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Modeling And Simulation Of Carbon Nanotube-Semiconductor Heterojunction Vertical Field Effect Transistors

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Scaling carbon nanotube CMOS FETs towards quantum limit

A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

Improving Subthreshold Swing to Thermionic Emission Limit in Carbon Nanotube Network Film-Based Field-Effect

Exploration of Vertical Scaling Limit in Carbon Nanotube Transistors

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Study of Synthetic Electric Field Effects and Quantum Confinement Effects in Extremely Scaled Gate-All-Around Tunnel FET

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

A Compact Physical Drain Current Model of Multitube Carbon Nanotube Field Effect Transistor Including Diameter Dispersion Effects

Carbon Nanotubes as Schottky Barrier Transistors

Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts