Abstract:Carbon nanotubes are regarded promising building blocks for the future nanoelectronics. High performance transistors and integrated circuits based on semiconducting CNT thin films, e.g., CMOS type 4-bit adder, CNT computer, flexible sensor etc., have been reported. These progresses demonstrate the CNT transistor technology is being pushed to practical application. For real circuits applications, high Ion/Ioff ratio with low Ioff for a transistor are required in high speed and low power consumption integrated circuits. However, the switching behavior of most reported CNT thin film transistors are not good enough. Due to the intrinsic ambipolarity of CNTs, the Ioff values are usually higher than hundreds of nano Ampe and the Ion/Ioff ratio is decreased to less than 102 at relatively high source/drain bias voltages (e.g. 1V). Though the switching behavior of the FETs based on individual CNTs can be improved by either special design of the device geometry or chemical doping, these methods do not work well in CNT thin film transistors. In this work, we improved the performance of CNT thin film transistors by combining the asymmetric gate design and chemical doping. In this way, the Ioff was suppressed while the Ion was increased at the mean time. Thus the Ion/Ioff ratio was increased by ~2 orders of magnitude when compared with normally designed top-gate device. Moreover, the devices showed better subthreshold swing (SS) and the threshold voltage (Vth) was closer to zero than normal devices. These improvements are benefit to more complicated circuits design, and our method is applicable for the emerging nanodevices.

Electrostatic Engineering of Nanotube Transistors for Improved Performance

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Performance Optimization of MOS-like Carbon Nanotube-Fets Based on Electrostatic Doping

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

On/Off Ratio Improvement of Carbon Nanotube Thin Film Transistors by Combining Asymmetric Gate Design and Chemical Doping

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Performance Optimization of Conventional MOS-Like Carbon Nanotube-FETs Based on Dual-Gate-Material

Performance Prediction of Graphene Nanoribbon and Carbon Nanotube Transistors

Carbon Nanotube Field Effect Transistors Based on Schottky Contact

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Performance optimization of MOS-like carbon nanotube FETs with realistic contacts

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

Suppression of Leakage Current in Carbon Nanotube Field-Effect Transistors

Improving Subthreshold Swing to Thermionic Emission Limit in Carbon Nanotube Network Film-Based Field-Effect

Performance Optimization of Carbon Nanotube Field Effect Transistors Based on Stair-Case Doping Strategy

Carbon Nanotube Electronics: Recent Advances