Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Ambipolarity Suppression of Carbon Nanotube Thin Film Transistors

On/Off Ratio Improvement of Carbon Nanotube Thin Film Transistors by Combining Asymmetric Gate Design and Chemical Doping

Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/off Ratio.

Electrostatic Engineering of Nanotube Transistors for Improved Performance

A Doping-Free Carbon Nanotube CMOS Inverter-Based Bipolar Diode and Ambipolar Transistor

Inner Doping of Carbon Nanotubes with Perovskites for Ultralow Power Transistors

Suppression of Leakage Current in Carbon Nanotube Field-Effect Transistors

Effect of ambipolarity suppression in PNPN TFET with dopant segregated Schottky-drain technique

Performance Enhancement Of Carbon Nanotube Thin Film Transistor By Yttrium Oxide Capping

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

Tuning the charge carrier polarity of roll-to-roll gravure printed carbon nanotube-based thin film transistors by an atomic layer deposited alumina nanolayer

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Intrinsically Flexible All-Carbon-nanotube Electronics Enabled by a Hybrid Organic–inorganic Gate Dielectric

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Short Channel Carbon Nanotube Thin Film Transistors with High On/off Ratio Fabricated by Two-Step Fringing Field Dielectrophoresis