Abstract:A physics-based analytical model of electrostatic potential for short-channel junctionless double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in which the full two-dimensional (2-D) Poisson’s equation is solved in channel region by a method of series expansion similar to Green’s function. The expression of the proposed electrostatic potential is completely rigorous and explicit. Based on this expression, analytical models of threshold voltage, subthreshold swing, and subthreshold drain current for JLDGMTs were derived. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. Results predicted by all the analytical models agree well with numerical solutions from the 2-D simulator. These analytical models can be used to investigate the operating mechanisms of nanoscale JLDGMTs and to optimize their device performance.

Analytical Models for Threshold Voltage, Drain Induced Barrier Lowering Effect of Junctionless Triple-Gate Finfets

Analytical Models for Channel Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Triple-Gate FinFETs

Analytical Models for Gan-Based Heterostructure-Free Normally off Fin-Shaped Field-Effect Transistor

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

A Threshold Voltage Model for GaN-based Heterostructure-Free Normally-off FinFET

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Compact Threshold Voltage Model for FinFETs

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Nanoscale Triple-Gate FinFET Design Considerations Based on an Analytical Model of Short-Channel Effects

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors

Analytical Modeling of Threshold Voltage for Double Gate MOSFET

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

3-D Analytical Model for Short-Channel Triple-Gate Junctionless MOSFETs

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets