Abstract:Heterogeneous integration enables high-density integration to improve system functionality, but meanwhile brings reliability concerns due to the intensification of temperature and thermal stress. However, research on thermal stress effects in nanoscale transistors within heterogeneous integrated circuit is still very limited up to now. Multiphysics computation for the heterogeneous integration of nanoscale p-FinFET with GaN high electron mobility transistor (HEMT) on silicon substrate is performed. Firstly, self-heating of GaN HEMT induced thermal stress is simulated. Then, thermal stress effects induced by the GaN HEMT on quantum transport in the FinFET at different locations are compared and analyzed, including the hole effective mass, hole average velocity, on/off-state current, and on-off ratio. Moreover, the impacts of crystal orientation configurations are further discussed. Simulation results show that the impact of thermal stress on FinFET is highly dependent on the Si crystal orientation and its location relative to GaN HEMT. Taking the FinFET with (001)/[110] confinement/transport orientation, which is at a distance of R FET and an angle of φ from the GaN HEMT as an example, thermal stress induces the significant reductions in I on and I off of FinFET at φ = π/2 and φ = 3π/2, and the increases of I on and I off in FinFET at φ = 0 and φ = π, but has small impact on FinFETs located diagonally to the GaN HEMT.

Analytical Models for Gan-Based Heterostructure-Free Normally off Fin-Shaped Field-Effect Transistor

A Threshold Voltage Model for GaN-based Heterostructure-Free Normally-off FinFET

Analytical Models for Threshold Voltage, Drain Induced Barrier Lowering Effect of Junctionless Triple-Gate Finfets

Analytical Models for Channel Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Triple-Gate FinFETs

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Analytical models for the electric potential, threshold voltage and drain current of long-channel junctionless double-gate transistors

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Analytical Models for Electric Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors

Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform

Compact Threshold Voltage Model for FinFETs

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

A Two-Dimensional Analytical Model for Tunnel Field Effect Transistor and Its Applications

Si-based hetero-material-gate tunnel field effect transistor: Analytical model and simulation

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

An Analytical Drain Current Model for Graphene Nanoribbon Tunnel Field-Effect Transistors

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs