Abstract:The distribution of fractional current change and threshold voltage shift in an ensemble of realistic 35 nm bulk negative-channel metal-oxide-semiconductor field-effect transistors caused by charge trapping on stress-generated defect states at the Si/SiO2 interface is studied using 3-D statistical ¿atomistic¿ simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps could result in rare but dramatic changes in the transistor characteristics. The evolution of threshold voltage distribution as a result of accumulation of trapped charges in the devices due to progressive negative bias temperature instability, positive bias temperature instability, or hot electron degradation is simulated and compared with simple analytical model predictions and recently published experimental measurements to demonstrate the necessity to consider statistical variability in realistic reliability simulations. The magnitude of the degradation in devices of different geometries is also investigated where minimal correlation is found.

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Simulation Study of Device Physics Issues in III&#x2013;V MOSFETs at 10 Nm Node

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Statistical Simulation of RTS Amplitude Distribution in Realistic Bulk MOSFETs Subject to Random Discreet Dopants.

Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

Two-Dimensional Quantum Simulation of Gate Leakage Current in Nanoscale Double Gate MOSFETs

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

Analysis of Threshold Voltage Distribution Due to Random Dopants: A 100 000-Sample 3-D Simulation Study

Two-dimensional Quantum Mechanical Simulation of Gate Leakage Current of Nanoscale MOSFETs

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Simulation of Statistical Aspects of Reliability in Nano CMOS Transistors

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation

Simulation of Statistical Variability in Nano-Cmos Transistors Using Drift-Diffusion, Monte Carlo and Non-Equilibrium Green’s Function Techniques

Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability

Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET

A New Method to Simulate Random Dopant Induced Threshold Voltage Fluctuations in Sub-50 Nm Mosfet'S with Non-Uniform Channel Doping

Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants