Abstract:Gate oxide breakdown is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip oxide reliability analysis assumes a uniform oxide-thickness for all devices. In practice, however, gate-oxide thickness varies from die-to-die and within-die and as the precision of process control worsens an alternative reliability analysis approach is needed. In this work, we propose a statistical framework for chip level gate oxide reliability analysis while considering both die-to-die and within-die components of thickness variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the full chip oxide reliability is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of only two distinct random variables. Using this transformation we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate-oxide thickness. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only 1~6% while improving the runtime by around three orders.

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Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

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Efficient Simulations Of 6 Sigma V-T Distributions Due To Random Discrete Dopants

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Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

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Statistical Simulation of RTS Amplitude Distribution in Realistic Bulk MOSFETs Subject to Random Discreet Dopants.

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Random Dopant Induced Threshold Voltage Fluctuations in Double Gate Mosfet'S

Statistical Enhancement of the Evaluation of Combined RDD- and LER-Induced $V_{T}$ Variability: Lessons from $\hbox{10}^{5}$ Sample Simulations

A statistical approach for full-chip gate-oxide reliability analysis

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Modeling the Threshold Voltage Variation Induced by Channel Random Dopant Fluctuation in Fully Depleted Silicon-on-insulator MOSFETs

Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Statistical Enhancement Of Combined Simulations Of Rdd And Ler Variability: What Can Simulation Of A 10(5) Sample Teach Us?

Simulation of Statistical Variability in Nano-Cmos Transistors Using Drift-Diffusion, Monte Carlo and Non-Equilibrium Green’s Function Techniques

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

The Impact of Random Doping Effects on CMOS SRAM Cell