Abstract:The distribution of fractional current change and threshold voltage shift in an ensemble of realistic 35 nm bulk negative-channel metal-oxide-semiconductor field-effect transistors caused by charge trapping on stress-generated defect states at the Si/SiO2 interface is studied using 3-D statistical ¿atomistic¿ simulations. The simulations take into account the underlying random discrete dopant distribution in the transistors, which in conjunction with strategically positioned traps could result in rare but dramatic changes in the transistor characteristics. The evolution of threshold voltage distribution as a result of accumulation of trapped charges in the devices due to progressive negative bias temperature instability, positive bias temperature instability, or hot electron degradation is simulated and compared with simple analytical model predictions and recently published experimental measurements to demonstrate the necessity to consider statistical variability in realistic reliability simulations. The magnitude of the degradation in devices of different geometries is also investigated where minimal correlation is found.

A New Method to Simulate Random Dopant Induced Threshold Voltage Fluctuations in Sub-50 Nm Mosfet'S with Non-Uniform Channel Doping

Random Dopant Induced Threshold Voltage Fluctuations in Double Gate Mosfet'S

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

Modeling the Threshold Voltage Variation Induced by Channel Random Dopant Fluctuation in Fully Depleted Silicon-on-insulator MOSFETs

Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability

Analysis of Threshold Voltage Distribution Due to Random Dopants: A 100 000-Sample 3-D Simulation Study

Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Efficient Simulations of 6&#x03c3; V<inf>T</inf> Distributions Due to Random Discrete Dopants

Statistical Simulation of RTS Amplitude Distribution in Realistic Bulk MOSFETs Subject to Random Discreet Dopants.

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Efficient Simulations Of 6 Sigma V-T Distributions Due To Random Discrete Dopants

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

Analytic modeling of potential and threshold voltage for short-channel thin-body fully depleted silicon-on-insulator MOSFETs with a vertical Gaussian doping profile

Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation