Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

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Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability

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Efficient Simulations Of 6 Sigma V-T Distributions Due To Random Discrete Dopants

Statistical Simulation of RTS Amplitude Distribution in Realistic Bulk MOSFETs Subject to Random Discreet Dopants.

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

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Statistical Enhancement of the Evaluation of Combined RDD- and LER-Induced $V_{T}$ Variability: Lessons from $\hbox{10}^{5}$ Sample Simulations

Simulation of Statistical Variability in Nano-Cmos Transistors Using Drift-Diffusion, Monte Carlo and Non-Equilibrium Green’s Function Techniques

Statistical enhancement of combined simulations of RDD and LER variability: What can simulation of a 105 sample teach us?

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

Simulation of Statistical Aspects of Reliability in Nano CMOS Transistors

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Modeling the Threshold Voltage Variation Induced by Channel Random Dopant Fluctuation in Fully Depleted Silicon-on-insulator MOSFETs

Understanding LER-Induced MOSFET $V_{T}$ Variability—Part I: Three-Dimensional Simulation of Large Statistical Samples

Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation