Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

Simulation of Statistical Aspects of Reliability in Nano CMOS Transistors

Simulation of Statistical Aspects of Charge Trapping and Related Degradation in Bulk Mosfets in the Presence of Random Discrete Dopants

Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants

Statistical Simulation of RTS Amplitude Distribution in Realistic Bulk MOSFETs Subject to Random Discreet Dopants.

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Simulation of Statistical Variability in Nano-Cmos Transistors Using Drift-Diffusion, Monte Carlo and Non-Equilibrium Green’s Function Techniques

Modeling and Simulation of Transistor and Circuit Variability and Reliability

Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Analysis of Threshold Voltage Distribution Due to Random Dopants: A 100 000-Sample 3-D Simulation Study

New Understanding on the Single-Trap Response under NBTI Stress and the Resulted Stochastic Degradation in Nanoscale MOSFETs

Applicability of Quasi-3D and 3D MOSFET Simulations in the ‘Atomistic’ Regime

Impact of Sti on Statistical Variability and Reliability of Decananometer Mosfets

Entire Bias Space Statistical Reliability Simulation by 3D-KMC Method and Its Application to the Reliability Assessment of Nanosheet FETs Based Circuits

Trap Dynamics Based 3D Kinetic Monte Carlo Simulation for Reliability Evaluation of UTBB MOSFETs

Random telegraph signal noise simulation of decanano MOSFETs subject to atomic scale structure variation

Statistical enhancement of combined simulations of RDD and LER variability: What can simulation of a 105 sample teach us?

Accurate Statistical Description of Random Dopant-Induced Threshold Voltage Variability

3-D Monte Carlo Simulation of the Impact of Quantum Confinement Scattering on the Magnitude of Current Fluctuations in Double Gate MOSFETs

Efficient Simulations of 6&#x03c3; V<inf>T</inf> Distributions Due to Random Discrete Dopants