Abstract:In this paper, we consider the strain effect of charge plasma structure when the characteristics of junctionless MOSFET with line edge roughness (LER) variation is studied. It is found that strain can lower the fluctuation rates of threshold voltage (V th ), on- (I on ) and off-state (I off ) current, while it doesn't impact that of the subthreshold swing (SS). Besides, it can also enlarge the average values of I on , V th and SS, but it reduces the average I off , at the same time. It implies that considering the strain effect makes our research on charge-plasma structure closer to the reality.

Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness

Strain Consideration of Charge Plasma Structure on Junctionless Transistor With Line Edge Roughness

Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect

The Immunity of Doping-Less Junctionless Transistor Variations Including the Line Edge Roughness

Charge-plasma Based Negative Capacitance Junctionless Transistor With Sub-60mV/dec Subthreshold Swing and High Ion/IoffRatio

Suppression of Statistical Variability in Junctionless FinFET Using Accumulation-Mode and Charge Plasma Structure

Effects of Gate Metal Work Function and Line Edge Roughness on the Variability of Junctionless Field-Effect Transistor

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Investigation of Trench Process Variation on the Recessed-Gate Junctionless MOSFETs Considering the Circuit Application

Investigations of Fin Vertical Nonuniformity Effects on Junctionless Multigate Transistor

Charge Plasma-Based Junctionless FinFET for The Immune of Fin Sidewall Angle Variation

Tunneling Leakage Current Reduction In Junctionless Transistors Using A Lightly Doped Region Near Drain

The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates

Exploration of Negative Capacitance in Multi-Gate Junctionless Transistor

Evaluation of DC and AC Performance of Junctionless MOSFETs in the Presence of Variability

Origin of Current Variations in Ultrathin Bipolar Junction Transistors Under Bending Stress

Impacts of gate line edge roughness on sub 100nm MOSFETs

A Study of Subthreshold Behavior of Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs from an Electrostatic Potential Viewpoint

Investigation of the Junctionless Line Tunnel Field-Effect Transistor

A Novel Junction Termination Technique with Excellent Cost-Performance and Extraordinary Anti-Charge-Deviation Ability

Investigation Of Line Tunnel Field Effect Transistor With Ge/Si Heterojunction