Abstract:In this paper, a gallium nitride (GaN) vertical superjunction (SJ) MOSFET with trench gate is proposed and studied by the TCAD simulation. In order to achieve the typical electric field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field) modulation effect by the P + /N/N + structure in the conventional Si SJ-MOS, the P-GaN/unintentional doped (UID)-GaN/N + -GaN stack is alternatively used by taking into account the unavailability of P + -GaN. In this manner, the P-GaN and N + -substrate serve as the field-stop (FS) layers in the proposed GaN SJ-MOS. In the forward bias, the enhancement-mode function of the device is enabled by the gated side-wall and aperture composite channel that leads to a 1.47-V threshold voltage of the device. In the reverse bias, the breakdown of the device is governed by two mechanisms: 1) the punchthrough (PT) in the top P-GaN/N-drift junction due to the possible under design of the P-GaN thickness; 2) the avalanche breakdown triggered by high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field due to the possible under design of the bottom UID-GaN thickness. Hence, from the uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution point of view, a device optimization approach for GaN vertical SJ-MOS is proposed. The hole and electron densities of P-GaN and N-drift are optimized to achieve a uniform <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E$ </tex-math></inline-formula> -field distribution in the device both in the lateral and vertical directions, which is found to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$6 \times 10^{16}$ </tex-math></inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-3}$ </tex-math></inline-formula> . Moreover, the thickness ratio of P-GaN/UID-GaN is designed to obtain an identical intrinsic breakdown for the top P-GaN/N-drift junction and bottom UID/N-drift region, which enables the maximum Baliga’s figure-of-merit (BFOM) of the device. The concept of device design and optimization is of great interests for GaN vertical device for over kilovolts applications.

Investigations of Fin Vertical Nonuniformity Effects on Junctionless Multigate Transistor

Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors

Investigations of Junctionless Nanowire Transistors with Non-Uniform Channel

Investigation Of Line Tunnel Field Effect Transistor With Ge/Si Heterojunction

Suppression of Tunneling Leakage Current in Junctionless Nanowire Transistors

Investigation of novel junctionless MOSFETs for technology node beyond 22 nm

The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs

Investigation of Trench Process Variation on the Recessed-Gate Junctionless MOSFETs Considering the Circuit Application

Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity

Study of drain induced channel effects in vertical GaN junction field-effect transistors

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Simulation Study of a Super-Junction Deep-Trench LDMOS With a Trapezoidal Trench

Suppression of subthreshold characteristics variation for junctionless multigate transistors using high-k spacers

Variation Investigation of Junction-less Transistor with Side-wall Charge-plasma Structure Induced by Line Edge Roughness

A Novel Kilovolts GaN Vertical Superjunction MOSFET With Trench Gate: Approach for Device Design and Optimization

Simulation on the performance comparison for nanoscale SOI and bulk junctionless FinFETs

Investigation of the Junctionless Line Tunnel Field-Effect Transistor

The Study and Modeling of Saturation Drain Voltage for Junctionless FinFET

Effects of the stepped sidewall morphology on the ON-state performance for vertical GaN trench-gate MOSFETs