Abstract:Carbon nanotube field-effect transistor (CNT FET) has been considered as a promising candidate for future high-performance and low-power integrated circuits (ICs) applications owing to its ballistic transport and excellent immunity to short channel effects (SCEs). Still, it easily suffers from the ambipolar property, and severe leakage current at off-state originated from gate-induced drain leakage (GIDL) in CNT FETs with small bandgap. Although some modifications on device structure have been experimentally demonstrated to suppress the leakage current in CNT FETs, there is still a lack of the structure with excellent scalability, which will hamper the development of CNT FETs toward a competitive technology node. Here, we explore how the device geometry design affects the leakage current in CNT FETs, and then propose the possible device structures to suppress off-state current and check their availability through the two-dimensional (2D) TCAD simulations. Among all the proposed structures, the L-shaped-spacer CNT FET exhibits significantly suppressed leakage current and excellent scalability down to sub-50 nm with a simple self-aligned gate process. According to the simulation results, the 50 nm gate-length L-shaped-spacer CNT FET exhibits an off-state current as low as approximately 1 nA/µm and an on-current as high as about 2.1 mA/µm at a supply voltage of −1 V and then can be extended as a universal device structure to suppress leakage current for all the narrow-bandgap semiconductors based FETs.

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A Junctionless Nanowire Transistor with a Dual-Material Gate

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Numerical Study On Dual Material Gate Nanowire Tunnel Field-Effect Transistor

Tunneling Leakage Current of Gate-All-Around Nanowire Junctionless Transistor with an Auxiliary Gate

Leakage Current Of Germanium-On-Insulator-Based Junctionless Nanowire Transistors

Junctionless nanowire MOSFET with dynamic threshold voltage operation methodology

High Performance Tri-gate Germanium-on-insulator Based Junctionless Nanowire Transistors

Performance enhancement of nanotube junctionless FETs with low doping concentration rings

Gate tunneling in nanowire MOSFETs

Computation of Direct Tunneling gate leakage currents in nano-MOSFETs using ensemble Full Band Monte Carlo with quantum correction

Analysis of gate-induced drain leakage in gate-all-around nanowire transistors

Investigations of Junctionless Nanowire Transistors with Non-Uniform Channel

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Reduction Of Junction Leakage Current In Sub-10 Nm Ultra-Shallow Nige/N-Ge Schottky Junctions By Dopant Segregation

Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors

Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor

Suppression of Leakage Current in Carbon Nanotube Field-Effect Transistors

Giant Negative Differential Resistance Effect Caused by Cutting off Acceptable Quantum States in Carbon Nanotube Tunneling Devices

Performance Investigation of P-Type Ge- and Ge-Core/Si-Shell Junctionless Nanowire Transistors