Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

Performance Investigation of P-Type Ge- and Ge-Core/Si-Shell Junctionless Nanowire Transistors

Performance Investigation on P-Type Si-, Ge-, and Ge–Si Core–Shell Nanowire Schottky Barrier Transistors

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Performance Comparison Between Si and Ge pDG-FETs for Different Channel Lengths Based on Hole Transport Simulation

Improving Electrical Performance in Ge–Si Core–shell Nanowire Transistor with a New Stripped Structure

High Performance Tri-gate Germanium-on-insulator Based Junctionless Nanowire Transistors

Performance Evaluation of GaAs–GaP Core–Shell-Nanowire Field-Effect Transistors

GaAs-GaP core-shell nanowire transistors: A computational study

High Performance of Trigate Junctionless Nanowire Mosfet with P+ Sidewall

A Comprehensive Study on Schottky Barrier Nanowire Transistors (Sb-Nwts): Principle, Physical Limits and Parameter Fluctuations

A Characterization Study of a Nanowire‐Network Transistor with Various Channel Layers

Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure

Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors

DC and Analog/rf Comparisons of Si- and Ge- Nanowire Schottky Barrier Transistors

Impact Of Strain On The Performance Of Ge-Si Core-Shell Nanowire Field Effect Transistors

Numerical analysis on core-shell based GeSi nanowire MOSFETs

Comparative Study of Dopant-Segregated Schottky Barrier Germanium Nanowire Transistors

Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex P-Channel Gate-All-Around Nanowire Transistors

Cryogenic Characteristics of Ge Channel Junctionless Nanowire Transistors

Suppression of Tunneling Leakage Current in Junctionless Nanowire Transistors

Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors